FDY6342L 반도체 회로 부품 판매점
Integrated Load Switch
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 Fairchild Semiconductor |
FDY6342L
Integrated Load Switch
November 2014
tm
Features
Max rDS(on) = 0.5 Ω at VGS = 4.5 V, ID = –0.83 A
Max rDS(on) = 0.7 Ω at VGS = 2.5 V, ID = –0.70 A
Max rDS(on) = 1.2 Ω at VGS = 1.8 V, ID = –0.43 A
Max rDS(on) = 1.8 Ω at VGS = 1.5 V, ID = –0.36 A
Control MOSFET (Q1) includes Zener protection for ESD
ruggedness (>4 kV Human body model)
High performance trench technology for extremely low rDS(on)
Compact industry standard SC89-6 surface mount package
RoHS Compliant
General Description
This device is particularly suited for compact power
management in portable electronic equipment where 2.5 V to
8 V input and 0.83 A output current capability are needed. This
load switch integrates a small N-Channel power MOSFET (Q1)
that drives a large P-Channel power MOSFET (Q2) in one tiny
SC89-6 package.
Applications
Power management
Load switch
6
5
4
1
2
3
SC89-6
Vin,R1
ON/OFF
4
5
Q2
3 Vout,C1
2 NC
Equivalent Circuit
IN
VDROP
OUT
Q1
R1,C1 6
1 R2
ON/OFF
See Application Circuit
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VIN
VON/OFF
ILoad
PD
TJ, TSTG
Parameter
Gate to Source Voltage (Q2)
Gate to Source Voltage (Q1)
Load Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 2)
(Note 2)
(Note 1a)
(Note 1b)
Ratings
±8
–0.5 to 8
0.83
1.0
0.625
0.446
–55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
200
280
°C/W
Device Marking
H
Device
FDY6342L
Package
SC89-6
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDY6342L Rev.B2
1
www.fairchildsemi.com
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVIN
ILoad
IFL
IRL
VIN Breakdown Voltage
Zero Gate Voltage Drain Current
Leakage Current, Forward
Leakage Current, Reverse
ID = –250 µA, VON/OFF = 0 V
VIN = –6.4 V, VON/OFF = 0 V
VIN = 8 V, VON/OFF = 0 V
VIN = –8 V, VON/OFF = 0 V
8
V
–1 µA
10 µA
–10 µA
On Characteristics (note 2)
VON/OFF(th) Gate Threshold Voltage
rDS(on)
Static Drain to Source On Resistance (Q2)
Static Drain to Source On Resistance (Q1)
VIN = VON/OFF, ID = –250 µA
VIN = 4.5 V, ID = –0.83 A
VIN = 2.5 V, ID = –0.70 A
VIN = 1.8 V, ID = –0.43 A
VIN = 1.5 V, ID = –0.36 A
VIN = 4.5 V, ID = 0.4 A
VIN = 2.7 V, ID = 0.2 A
0.65
0.85
0.28
0.35
0.45
0.57
2.9
3.5
1.5
0.5
0.7
1.2
1.8
4.0
5.0
V
Ω
Ω
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
VSD Source to Drain Diode Forward Voltage VON/OFF = 0 V, IS = –0.25 A (Note 2)
–0.25
–0.8 –1.2
A
V
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by
the user's board design.
a)200 oC/W when mounted on
a 1 in2 pad of 2 oz copper.
b)280 oC/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
FDY6342L Load Switch Application circuit
IN Q2
R1
Q1
ON/OFF
OUT
C1
LOAD
R2
External Component Recommendation:
For additional in-rush current control, R2 and C1 can be added. For more information, see application note AN1030
©2008 Fairchild Semiconductor Corporation
FDY6342L Rev.B2
2
www.fairchildsemi.com
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