CHT3029-99F 반도체 회로 부품 판매점
DC-35GHz 4 Bit Digital Attenuator
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 United Monolithic Semiconductors |
CHT3029-99F
DC-35GHz 4 Bit Digital Attenuator
GaAs Monolithic Microwave IC
Description
The CHT3029-99F is a very wide band digital
attenuator, which integrates 4 bits with a LSB
of 1dB and provides a dynamic range of
15dB from DC to 35GHz.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
■ Broadband performances: DC-35GHz
■ Insertion Loss (state 0): 4.5dB
■ RMS attenuation error: 0.2dB
■ Return Losses: 12dB
■ DC bias: V+=5V and V-=-5V
■ No internal DC Block at Input and
Output RF accesses
■ Chip size 2.61 x 1.56mm²
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Freq
IL
Rms_att_er
Dyn
Parameter
Frequency range
Insertion Loss
RMS of attenuation error
Dynamic
Min Typ Max Unit
DC 35 GHz
4.5 dB
0.2 dB
15 dB
Ref. : DSCHT30294330 - 26 Nov 14
1/12 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHT3029-99F
DC-35GHz 4 Bit Digital Attenuator
Electrical Characteristics
Tamb.= +25°C, V+ = +5V V- = -5V
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
DC 35 GHz
IL Insertion Loss
4.5 dB
S11 Input Return Loss
12 dB
S22 Output Return Loss
14 dB
IP1dB Input power at 1dB gain compression
20 dBm
Dyn Dynamic
15 dB
LSB Attenuator elementary step
1 dB
Att_err Attenuation error
±0.5 dB
Rms_att_ RMS attenuation error
err
0.2 dB
Phivar Phase variation
-5/+20
°
Rms_phi RMS phase variation
var
12 °
Sw_t Switching time
15 ns
V+ Positive supply voltage
5V
V- Negative supply voltage
-5 V
Vctrl_L Control voltage low level
0 0.4 V
Vctrl_H Control voltage high level
2.4 7 V
I_V+ Positive supply DC current
5 mA
I_V- Negative supply DC current
5 mA
These values are representative measurements in test fixture with bonding wires of typically
0.2nH at RF accesses.
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
V+ Maximum positive voltage
8V
V- Minimum negative voltage
-8 mA
Ai CTRL voltage (Vctrl _low, Vctrl _high)
-2 to 8
V
Pin Maximum Input power
27 dBm
Tj Junction temperature
175 °C
Ta Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +150
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
Ref. : DSCHT30294330 - 26 Nov 14
2/12 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
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제조업체: United Monolithic Semiconductors
( umc )
CHT3029-99F data
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