MSN06M2 반도체 회로 부품 판매점
N-Channel Enhancement Mode Power MOS FET
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 MORESEMI |
MSN06M2
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 60V,ID = 0.115A
RDS(ON) < 3Ω @ VGS=5V
RDS(ON) < 2Ω @ VGS=10V
● Lead free product is acquired
● Surface mount package
Application
●Direct logic-level interface: TTL/CMOS
●Drivers: relays, solenoids,lamps, hammers,display,
memories, transistors, etc.
●Battery operated systems
●Solid-state relays
Lead Free
PIN Configuration
Marking and pin assignment
SOT-23 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN06M2
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
60
±20
0.115
0.8
0.2
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
625 ℃/W
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http://www.moresemi.com
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MSN06M2
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
VSD
IS
Condition
VGS=0V ID=250μA
VDS=60V,VGS=0V
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=5V, ID=0.05A
VGS=10V, ID=0.5A
VDS=10V,ID=0.2A
VDS=30V,VGS=0V,
F=1.0MHz
VDD=30V,ID=0.2A
VGS=10V,RGEN=10Ω
VDS=10V,ID=0.115A,
VGS=4.5V
VGS=0V,IS=0.115A
Min Typ Max Unit
60 68
--
-
1
- - ±100
V
μA
nA
1 1.7
- 1.3
- 1.1
0.08 -
2.5
3
2
-
V
Ω
Ω
S
- 20
- 10
- 3.6
50
20
5
PF
PF
PF
- 10
- 50
- 17
- 10
- 1.7
-
-
-
-
3
nS
nS
nS
nS
nC
- - 1.2
V
-
- 0.115
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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http://www.moresemi.com
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MSN06M2 data
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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전력반도체 문의 : 010-3582-2743
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