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MORESEMI |
MSN0603Y
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Feature
● VDS =60V,ID =3.0A
RDS(ON) <100mΩ @ VGS=10V
RDS(ON) < 120mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
●Battery switch
●DC/DC converter
Lead Free
PIN Configuration
Marking and Pin Assignment
SOT-89 -3L top view
D
G
S
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0603Y
SOT-89-3L
Reel Size
Ø180mm
Tape width
12mm
Quantity
1000units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
60
±20
3
10
1.7
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
73.5 ℃/W
MORE Semiconductor Company Limited
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MSN0603Y
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Parameter
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Symbol
BVDSS
IDSS
Symbol
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
Condition
VGS=0V ID=250μA
VDS=60V,VGS=0V
Condition
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=3A
VGS=4.5V, ID=3A
VDS=15V,ID=2A
VDS=30V,VGS=0V,
F=1.0MHz
VDD=30V,ID=1.5A
VGS=10V,RGEN=1Ω
VDS=30V,ID=3A,
VGS=4.5V
VGS=0V,IS=3A
Min Typ Max Unit
60 65
--
Min Typ
--
-
1
Max
±100
V
μA
Unit
nA
1 1.2 2.0
- 73 100
- - 120
2-
-
V
mΩ
mΩ
S
- 247
- 34
- 19.5
-
-
-
PF
PF
PF
-6
- 15
- 15
- 10
-6
-1
- 1.3
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - 1.2
--
3
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
MORE Semiconductor Company Limited
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