MSN0360D 반도체 회로 부품 판매점
N-Channel Enhancement Mode Power MOS FET
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 MORESEMI |
MSN0360D
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =30V,ID =60A
RDS(ON) < 14mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Lead Free
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible Power Supply
PIN Configuration
Marking and pin assignment
TO-252-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0360D
MSN0360D
TO-252-2L
Reel Size
-
Tape width
-
Quantity
2500 units
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±20
60
36.6
220
100
0.7
230
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
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MSN0360D
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
2.5 ℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=30V,VGS=0V
30 33
--
-
1
V
μA
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
IGSS
VGS(th)
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
- - ±100
1 1.6
2.5
nA
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=30A
VGS=5V, ID=30A
- 12 14
- 15
18
mΩ
Forward Transconductance
Dynamic Characteristics (Note4)
gFS
VDS=5V,ID=30A
15 -
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
- 875
-
PF
VDS=15V,VGS=0V,
Coss
- 570
-
PF
F=1.0MHz
Crss
- 155
-
PF
Turn-on Delay Time
td(on)
- 17
-
nS
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=15V,ID=30A
VGS=10V,RGEN=1.8Ω
- 155
- 10
-
-
nS
nS
Turn-Off Fall Time
tf
- 75
-
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
- 18.5
-
nC
VDS=24V,ID=60A,
Qgs - 7 - nC
VGS=10V
Qgd
- 9.5
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=60A
- 0.85 1.6
V
IS
--
60
A
trr
TJ = 25°C, IF = 60A
- 40
-
nS
Qrr
di/dt = 100A/μs(Note3)
- 35
-
μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition：Tj=25℃, VDD=15V,VG=10V,L=1mH, Rg=25Ω
MORE Semiconductor Company Limited
http://www.moresemi.com
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MSN0360D data
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