MSN0260D 반도체 회로 부품 판매점
N-Channel Enhancement Mode Power MOS FET
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 MORESEMI |
MSN0260D
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =20V,ID =60A
RDS(ON) <6mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Lead Free
Application
● Load switching
● Hard switched and high frequency circuits
● Uninterruptible power supply
PIN Configuration
Marking and pin assignment
TO-252-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0260D
MSN0260D
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
ID
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±12
60
42
210
60
0.48
200
-55 To 150
Unit
V
V
A
A
A
W
W/℃
mJ
℃
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MSN0260D
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
2.1 ℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=20V,VGS=0V
20 -
-
V
- - 1 μA
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
IGSS
VGS(th)
RDS(ON)
VGS=±12V,VDS=0V
VDS=VGS,ID=250μA
VGS=4.5V, ID=20 A
VGS=2.5V, ID=15A
- - ±100 nA
0.5 0.75
- 4.8
6.2
1.0
6
9
V
mΩ
mΩ
Forward Transconductance
Dynamic Characteristics (Note4)
gFS
VDS=10V,ID=20A
15 -
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
- 2000
-
PF
VDS=10V,VGS=0V,
Coss
- 500
-
PF
F=1.0MHz
Crss
- 200
-
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD=10V,ID=2A,RL=1Ω
VGS=4.5V,RG=3Ω
- 6.4
- 17.2
- 29.6
-
-
-
nS
nS
nS
Turn-Off Fall Time
tf
- 16.8
-
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - 27
VDS=10V,ID=20A,
Qgs - 6.5
VGS=10V
Qgd - 6.4
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD
VGS=0V,IS=10A
-
1.2 V
IS
--
60
A
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 25°C, IF = 20A
- 25
-
nS
Qrr
di/dt = 100A/μs(Note3)
- 24
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25℃,VDD=10V,VG=10V,L=0.5mH,Rg=25Ω，
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http://www.moresemi.com
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MSN0260D data
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