MSC0311WE 반도체 회로 부품 판매점
Dual N-Channel Enhancement Mode Power MOS FET
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 MORESEMI |
MSC0311WE
30V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 30V,ID =11A
RDS(ON) < 10mΩ @ VGS=10V
RDS(ON) < 14mΩ @ VGS=4.5V
ESD Rating: 2000V HBM
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
● ESD proteted
Application
●PWM application
●Load switch
PIN Configuration
Lead Free
Marking and pin assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSC0311WE
MSC0311WE
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±10
11
50
2.5
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
50 ℃/W
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MSC0311WE
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=30V,VGS=0V
Parameter
Symbol
Condition
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
IGSS
VGS(th)
VGS=±10V,VDS=0V
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=8A
VGS=4.5V, ID=6A
Forward Transconductance
Dynamic Characteristics (Note4)
gFS VDS=10V,ID=11A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=15V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD=15V,RL=2.2Ω
VGS=5V,RGEN=3Ω
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=15V,ID=8A,
Qgs
VGS=4.5V
Qgd
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD VGS=0V,IS=1A
IS
Min Typ Max Unit
30
--
Min Typ
--
-
1
Max
±10
V
μA
Unit
μA
1.0 1.5
-7
- 10
25 -
2.0
10
14
-
V
mΩ
mΩ
S
- 1155
- 260
- 95
-
-
-
PF
PF
PF
- 10
- 16
- 40
- 10.8
- 17.5
- 4.5
- 2.5
-
-
nS
nS
nS
nS
nC
nC
nC
- - 1.2
--
11
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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http://www.moresemi.com
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