TS820-600T 반도체 회로 부품 판매점
Sensitive and standard 8A SCRs
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 STMicroelectronics |
TN805, TN815, TS820, TYN608
Sensitive and standard 8 A SCRs
A
A
K
G
TO-220AB
G
A
K
A
TO-220FPAB
G
A
K
A
KA
G
IPAK
KA
G
TO-220AB
A
KA
G
DPAK
Features
• On-state rms current, IT(RMS) 8 A
• Repetitive peak off-state voltage, VDRM/VRRM
600 and 800 V
• Triggering gate current, IGT 0.2 to 15 mA
Datasheet - production data
Description
Available either in sensitive (TS8) or standard
(TN8 / TYN) gate triggering levels, the 8 A SCR
series is suitable to fit all modes of control found
in applications such as overvoltage crowbar
protection, motor control circuits in power tools
and kitchen aids, inrush current limiting circuits,
capacitive discharge ignition and voltage
regulation circuits.
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space.
Table 1. Device summary
Order code
Voltage (x00)
VDRM/VRRM
Sensitivity
Package
IGT
600 V 800 V
TS820-600B X
0.2 mA DPAK
TS820-600H X
0.2 mA
IPAK
TS820-600T X
0.2 mA
TO-
220AB
TS820-600FP X
0.2 mA
TO-
220FPA
B
TN805-600B X
5 mA
DPAK
TN815-x00B X X 15 mA DPAK
TYN608RG X
15 mA
TO-
220AB
May 2014
This is information on a product in full production.
DocID7476 Rev 8
1/17
www.st.com
Characteristics
1 Characteristics
TN805, TN815, TS820, TYN608
Table 2. Absolute ratings (limiting values)
Value
Symbol
Parameter
TN805
Unit
TN815 TYN608
TS820
IT(RMS)
IT(AV)
ITSM
I2t
dI/dt
IGM
PG(AV)
Tstg
Tj
VRGM
On-state rms current (180° conduction angle)
Tc = 110 °C
T0-220FPAB, Tc = 91 °C
Tc = 110 °C
Average on-state current (180° conduction angle)
T0-220FPAB, Tc = 91 °C
Non repetitive surge peak
on-state current
I2t value for fusing
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Tj = 25 °C
Tj = 25 °C
Critical rate of rise of on-state
current IG = 2 x IGT , tr ≤ 100 ns
F = 60 Hz
Tj = 125 °C
Peak gate current
tp = 20 µs
Tj = 125 °C
Average gate power dissipation
Tj = 125 °C
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage (for TN8x5 and TYN608 only)
8
5
73
70
24.5
100
95
45
50
4
1
- 40 to + 150
- 40 to + 125
5
A
A
A
A2S
A/µs
A
W
°C
V
Table 3. Sensitive electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
TS820
Unit
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V, RL = 140 Ω
VD = VDRM, RL = 3.3 kΩ, RGK = 220 Ω
IRG = 10 µA
IT = 50 mA, RGK = 1 kΩ
IG = 1 mA ,, RGK = 1 kΩ
VD = 65% VDRM, RGK = 220 Ω
ITM = 16 A, tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM, RGK = 220 Ω
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
MAX.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
200
0.8
0.1
8
5
6
5
1.6
0.85
46
5
1
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
2/17
DocID7476 Rev 8
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PDF 파일 내의 페이지 : 총 17 페이지
제조업체: STMicroelectronics
( stm )
TS820-600T data
데이터시트 다운로드 :
[ TS820-600T.PDF ]
[ TS820-600T 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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