CNA1006N 반도체 회로 부품 판매점
Photo Interrupter
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 Panasonic Semiconductor |
Transmissive Photosensors (Photo Interrupters)
CNA1006N
Photo Interrupter
For contactless SW, object detection
Overview
CNA1006N is a transmissive photosensor in which a high
efficiency GaAs infrared light emitting diode is used as the light
emitting element, and a high sensitivity phototransistor is used as
the light detecting element. The two elements are arranged so as to
face each other, and objects passing between them are detected.
Features
Highly precise position detection : 0.3 mm
Gap width : 3 mm
The type direetly attached to PCB (with positioning pins and
fixing hooks)
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Input (Light
Reverse voltage (DC)
VR
3
V
Forward current (DC)
emitting diode)
IF
50 mA
Power dissipation
PD*1 75 mW
Output (Photo
transistor)
Temperature
Collector current
Collector to emitter voltage
Emitter to collector voltage
Collector power dissipation
Operating ambient temperature
Storage temperature
IC 20
VCEO
30
VECO
5
PC*2
100
Topr –25 to +85
Tstg – 30 to +100
mA
V
V
mW
˚C
˚C
1.5
16.6
11.8
3.0+–00..32
A
Unit : mm
Slit width
1.5±0.1
SEC A-A'
Optical
center
2-ø1.0
+0
–0.05
A'
4-0.45
(7.6)
15.0
12.6±0.3
23
2-1.5
2
(2.54)
2-3.3
3
14
Pin connection
14
1: Anode 3: Collecter
(Note)
2: Cathode 4: Emitter
1. Tolerance unless otherwise specified is ±0.2
2. ( ) Dimension is reference
3. Fitting strength is 2N min. (Static load)
*1 Input power derating ratio is
1.0 mW/˚C at Ta ≥ 25˚C.
*2 Output power derating ratio is
1.33 mW/˚C at Ta ≥ 25˚C.
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
Input Forward voltage (DC)
characteristics Reverse current (DC)
VF IF = 20mA
IR VR = 3V
Output characteristics Collector cutoff current
ICEO VCE = 10V
Collector current
IC VCE = 5V, IF = 20mA
Transfer
characteristics
Collector to emitter saturation voltage
VCE(sat) IF = 40mA, IC = 1mA
Response time
tr , tf* VCC = 5V, IC = 1mA, RL = 100Ω
* Switching time measurement circuit
min typ max Unit
1.25 1.4 V
10 µA
10 200 nA
0.7 14 mA
0.4 V
5 µs
Sig.IN
50Ω
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
tf : Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
1
CNA1006N
Transmissive Photosensors (Photo Interrupters)
IF , IC — Ta
60
IF
50
40
30
IC
20
10
0
– 25 0
20 40 60 80 100
Ambient temperature Ta (˚C )
IC — IF
10 2
VCE = 5V
Ta = 25˚C
10
1
IF — VF
60
Ta = 25˚C
50
40
30
20
10
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Forward voltage VF (V)
IC — VCE
10 2
Ta = 25˚C
10 IF = 30mA
20mA
10mA
1
VF — Ta
1.6
IF = 50mA
1.2
10mA
1mA
0.8
0.4
0
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
IC — Ta
160
VCE = 5V
IF = 20mA
120
80
10 –1
10 –1
40
10 –2
10 –1
1 10
Forward current IF (mA)
10 2
10 –2
10 –1
1
10 10 2
Collector to emitter voltage VCE (V)
0
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
ICEO — Ta
10 3
VCE = 10V
10 2
10
1
10 –1
10 –2
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
tr — IC
10 2 VCC = 5V
Ta = 25˚C
10
RL = 1kΩ
500Ω
100Ω
1
10 –1
Sig.IN VCC
10 –2
10 –1
Sig.
OUT
50Ω
Sig. 90%
OUT
RL tr
td
10%
tf
1 10 102
Collector current IC (mA)
IC — d
100
VCE = 5V
Ta = 25˚C
IF = 20mA
80
Criterion
0
d
60
40
20
0
0123456
Distance d (mm)
2
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제조업체: Panasonic Semiconductor
( panasonic )
CNA1006N data
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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