RQJ0305EQDQS 반도체 회로 부품 판매점
Silicon P-Channel MOS FET
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 Renesas |
RQJ0305EQDQS
Silicon P Channel MOS FET
Power Switching
Features
• Low gate drive
VDSS : –30 V and 2.5 V gate drive
• Low drive current
• High speed switching
• Small traditional power package (UPAK)
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK R )
1
2
3
4
1G
Notes: Marking is "EQ".
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Thermal resistance
VDSS
VGSS
ID
ID(pulse) Note1
IDR
Pch Note2
Rth(ch-a) Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
REJ03G1779-0100
Rev.1.00
Mar 16, 2009
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Ratings
–30
+8 / –12
–3.4
–12
3.4
1.5
83
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C /W
°C
°C
REJ03G1779-0100 Rev.1.00 Mar 16, 2009
Page 1 of 7
RQJ0305EQDQS
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
Gate to Source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
V(BR)GSS
IGSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
Min
–30
+8
–12
—
—
—
–0.4
—
—
3.0
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
110
165
4.3
330
70
40
17
37
39
10
3.0
0.6
1.3
–0.9
Max
—
—
—
+10
–10
–1
–1.4
140
230
—
—
—
—
—
—
—
—
—
—
—
–1.3
Unit
V
V
V
µA
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
(Ta = 25°C)
Test conditions
ID = –10 mA, VGS = 0
IG = +100 µA, VDS = 0
IG = –100 µA, VDS = 0
VGS = +6 V, VDS = 0
VGS = –10 V, VDS = 0
VDS = –30 V, VGS = 0
VDS = –10 V, ID = -1 mA
ID = –1.7 A, VGS = –4.5 V Note3
ID = –1.7 A, VGS = –2.5 V Note3
ID = –1.7 A, VDS = –10 V Note3
VDS = –10 V, VGS = 0,
f = 1 MHz
ID = –1.3 A
VGS = –4.5 V
RL = 7.7 Ω
Rg = 4.7 Ω
VDD = –10 V
VGS = –4.5 V
ID = –2.4 A
IF = –3.4 A, VGS = 0 Note3
REJ03G1779-0100 Rev.1.00 Mar 16, 2009
Page 2 of 7
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