CR6PM 반도체 회로 부품 판매점
MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE
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 Powerex Power Semiconductors |
CR6PM
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR6PM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
10.5 MAX
5.2
Dimensions
in mm
2.8
TYPE
NAME
VOLTAGE
CLASS
φ3.2±0.2
1.3 MAX
0.8
• IT (AV) ........................................................................... 6A
• VDRM ..............................................................400V/600V
• IGT ..........................................................................10mA
• Viso ........................................................................ 1500V
• UL Recognized: File No. E80276
2.54
2.54
0.5 2.6
2
3
1
123
∗ Measurement point of
case temperature
1 CATHODE
2 ANODE
3 GATE
TO-220F
APPLICATION
Switching mode power supply, ECR, regulator for autocycle, motor control
MAXIMUM RATINGS (Ta=25°C, unless otherwise noted)
Symbol
Parameter
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
8
400
500
320
400
320
Voltage class
12
600
720
480
600
480
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
Viso
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Isolation voltage
Conditions
Commercial frequency, sine half wave, 180° conduction, Tc=85°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ta=25°C, AC 1 minute, each terminal to case
Ratings
9.4
6
90
34
5
0.5
6
10
2
–40 ~ +125
–40 ~ +125
2.0
1500
Unit
V
V
V
V
V
Unit
A
A
A
A2s
W
W
V
V
A
°C
°C
g
V
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR6PM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IRRM
Repetitive peak reverse current
Tj=125°C, VRRM applied
IDRM
Repetitive peak off-state current
Tj=125°C, VDRM applied
VTM On-state voltage
Tc=25°C, ITM=20A, Instantaneous value
VGT Gate trigger voltage
Tj=25°C, VD=6V, IT=1A
VGD Gate non-trigger voltage
Tj=125°C, VD=1/2VDRM
IGT Gate trigger current
Tj=25°C, VD=6V, IT=1A
IH
Rth (j-c)
Holding current
Thermal resistance
Tj=25°C, VD=12V
Junction to case V1
V1. The contact thermal resistance Rth (j-c) is 0.5°C/W with greased.
Limits
Min. Typ. Max.
— — 2.0
— — 2.0
— — 1.7
— — 1.0
0.2 —
—
— — 10
— 15 —
— — 4.0
Unit
mA
mA
V
V
V
mA
mA
°C/W
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
103
7 Tc = 125°C
5
3
2
102
7
5
3
2
101
7
5
3
2
100
012345
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
200
180
160
140
120
100
80
60
40
20
0
100 2 3 4 5 7 101 2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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CR6PM data
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관련 데이터시트
CR6PM
MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE - Mitsubishi Electric Semiconductor
CR6PM
MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE - Powerex Power Semiconductors