LM2665M6 반도체 회로 부품 판매점
Switched Capacitor Voltage Converter
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 National Semiconductor |
November 1999
LM2665
Switched Capacitor Voltage Converter
General Description
The LM2665 CMOS charge-pump voltage converter oper-
ates as a voltage doubler for an input voltage in the range of
+2.5V to +5.5V. Two low cost capacitors and a diode
(needed during start-up) are used in this circuit to provide up
to 40 mA of output current. The LM2665 can also work as a
voltage divider to split a voltage in the range of +1.8V to
+11V in half.
The LM2665 operates at 160 kHz oscillator frequency to re-
duce output resistance and voltage ripple. With an operating
current of only 650 µA (operating efficiency greater than 90%
with most loads) and 1µA typical shutdown current, the
LM2665 provides ideal performance for battery powered
systems. The device is in SOT-23-6 package.
Features
n Doubles or Splits Input Supply Voltage
n SOT23-6 Package
n 12Ω Typical Output Impedance
n 90% Typical Conversion Efficiency at 40 mA
n 1µA Typical Shutdown Current
Applications
n Cellular Phones
n Pagers
n PDAs
n Operational Amplifier Power Suppliers
n Interface Power Suppliers
n Handheld Instruments
Basic Application Circuits
Voltage Doubler
Splitting Vin in Half
DS100049-1
DS100049-2
© 1999 National Semiconductor Corporation DS100049
www.national.com
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V+ to GND, or GND to OUT)
5.8V
SD (GND − 0.3V) to (V+ +
0.3V)
V+ and OUT Continuous Output Current
50 mA
Output Short-Circuit Duration to GND (Note 2)
1 sec.
Continuous Power
Dissipation (TA = 25˚C)(Note 3)
TJMax(Note 3)
θJA (Note 3)
Operating Junction
Temperature Range
Storage Temperature Range
Lead Temp. (Soldering, 10 seconds)
ESD Rating
600 mW
150˚C
210˚C/W
−40˚ to 85˚C
−65˚C to +150˚C
300˚C
2kV
Electrical Characteristics
Limits in standard typeface are for
less otherwise specified: V+ = 5V,
TJ
C1
=
=
25˚C,
C2 =
and limits in boldface
3.3 µF. (Note 4)
type
apply
over
the
full
operating
temperature
range.
Un-
Symbol
Parameter
Condition
Min
Typ
Max
Units
V+ Supply Voltage
2.5 5.5 V
IQ Supply Current
No Load
ISD Shutdown Supply Current
VSD
Shutdown Pin Input Voltage
Shutdown Mode
Normal Operation
650
1250
µA
1 µA
2.0
(Note 5)
V
0.8
(Note 6)
IL
RSW
Output Current
Sum of the Rds(on)of the four
internal MOSFET switches
IL = 40 mA
40
3.5
mA
8Ω
ROUT
Output Resistance (Note 7)
IL = 40 mA
12 25 Ω
fOSC
Oscillator Frequency
(Note 8)
80 160
kHz
fSW Switching Frequency
(Note 8)
40 80
kHz
PEFF
Power Efficiency
RL (1.0k) between GND and 86 93
OUT
%
IL = 40 mA to GND
90
VOEFF
Voltage Conversion Efficiency No Load
99 99.96
%
Note 1: Absolute maximum ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when operating the device
beyond its rated operating conditions.
Note 2: OUT may be shorted to GND for one second without damage. However, shorting OUT to V+ may damage the device and should be avoided. Also, for tem-
peratures above 85˚C, OUT must not be shorted to GND or V+, or device may be damaged.
Note 3: The maximum allowable power dissipation is calculated by using PDMax = (TJMax − TA)/θJA, where TJMax is the maximum junction temperature, TA is the
ambient temperature, and θJA is the junction-to-ambient thermal resistance of the specified package.
Note 4: In the test circuit, capacitors C1 and C2 are 3.3 µF, 0.3Ω maximum ESR capacitors. Capacitors with higher ESR will increase output resistance, reduce output
voltage and efficiency.
Note 5: The minimum input high for the shutdown pin equals 40% of V+.
Note 6: The maximum input low of the shutdown pin equals 20% of V+.
Note 7: Specified output resistance includes internal switch resistance and capacitor ESR. See the details in the application information for positive voltage doubler.
Note 8: The output switches operate at one half of the oscillator frequency, fOSC = 2fSW.
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