FP502 반도체 회로 부품 판매점
DC-DC Converter Applications
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 Sanyo Semicon Device |
Ordering number:EN5263
FP502
N-Channel Silicon MOSFET
Silicon Schottky Barrier Diode
DC-DC Converter Applications
Features
· Composite type with a high-speed N-channel
MOSFET and a low-forward voltage Schottky
barrier diode contained in the PCP4 package, saving
the mount space greatly.
Package Dimensions
unit:mm
2132
[FP502]
1:Source, Anode
2:Common (Drain,
Cathode)
3:Source, Anode
4Common (Drain,
Cathode)
5:Gate
6:Common (Drain,
Cathode)
7:Common (Drain,
Cathode)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Allowable Power Dissipation
Storage Temperature
[MOS block]
PD
PD
Tstg
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Channel Temperature
VDSS
VGSS
ID
IDP
Tch
[Diode block]
Average Rectified Current
IO
Conditions
Tc=25˚C, 1 unit
Mounted on ceramic board (250mm2×0.8mm) 1 unit
PW≤10µs, duty cycle ≤1%
Electrical Characteristics at Ta=25˚C
Parameter
[MOS block]
D-S Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Conditons
V(BR)DSS
IDSS
IGSS
VGS(off)
| Yfs |
RDS(on)
RDS(on)
Ciss
Coss
Crss
ID=1mA, VGS=0
VDS=10.4V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=10V
ID=500mA, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1NHZ
VDS=10V, f=1MHz
SANYO:PCP4
(Bottom view)
Ratings
3.5
1.5
–55 to +150
Unit
W
W
˚C
11 V
±10 V
2A
8A
150 ˚C
500 mA
Ratings
min typ max
Unit
11 V
400 µA
±10 µA
1.0 4.0 V
1.2 2.2
S
140 200 mΩ
200 320 mΩ
150 pF
200 pF
45 pF
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA(KT) 71096YK (KOTO) TA-0623 No.5263-1/4
Continued from preceding page.
Parameter
[MOS block]
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
[Diode block]
Forward Voltage
Reverse Recovery Time
Switching Time Test Circuit
FP502
Symbol
Conditons
td(on)
tr
td(off)
tf
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VF IF=500mA
trr IF=500mA, di/dt=50A/µs
Electrical Connection
Ratings
min typ max
Unit
10 ns
25 ns
25 ns
20 ns
0.4 0.45 V
20 30 ns
1:Source, Anode
2:Common (Drain, Cathode)
3:Source, Anode
4Common (Drain, Cathode)
5:Gate
6:Common (Drain, Cathode)
7:Common (Drain, Cathode)
(Top view)
No.5263-2/4
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PDF 파일 내의 페이지 : 총 4 페이지
제조업체: Sanyo Semicon Device
( sanyo )
FP502 converter
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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전력반도체 문의 : 010-3582-2743
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