MIXA60WB1200TEH 반도체 회로 부품 판매점
Converter - Brake - Inverter Module
|
|
 IXYS |
Converter - Brake - Inverter
Module
XPT IGBT
Part name (Marking on product)
MIXA60WB1200TEH
MIXA60WB1200TEH
Three Phase
Rectifier
Brake Three Phase
Chopper
Inverter
VRRM = 1600 V VCES = 1200 V VCES = 1200 V
IDAVM = 190 A IC25 = 60 A IC25 = 85 A
IFSM = 700 A VCE(sat) = 1.8 V VCE(sat) = 1.8 V
21 22
D11 D13 D15
D7
16
D1
T1
18
D3
T3
20
D5
T5
7
1 23
15
17
6
19
5
4
NTC
8
D12 D14 D16 14
23 24
T7 11
10
D2
T2
12
D4
T4
13 T6 D6
9
E 72873
Pin configuration see outlines.
Features:
• Easy paralleling due to the positive
temperature coefficient of the on-state
voltage
• Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- square RBSOA @ 3x IC
- low EMI
• Thin wafer technology combined with
the XPT design results in a competitive
low VCE(sat)
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
resonant-mode power supplies
Package:
• "E3-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
• Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110916e
1-8
MIXA60WB1200TEH
Ouput Inverter T1 - T6
Symbol
VCES
VGES
VGEM
IC25
IC80
Ptot
VCE(sat)
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
VGE(th)
ICES
gate emitter threshold voltage
collector emitter leakage current
IGES
QG(on)
td(on)
tr
td(off)
tf
Eon
Eoff
RBSOA
gate emitter leakage current
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
SCSOA
tSC
ISC
RthJC
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
Conditions
continuous
transient
TVJ = 25°C
IC = 55 A; VGE = 15 V
IC = 2 mA; VGE = VCE
VCE = VCES; VGE = 0 V
VGE = ±20 V
VCE = 600 V; VGE = 15 V; IC = 50 A
TC = 25°C
TC = 80°C
TC = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
min.
5.4
inductive load
VCE = 600 V; IC = 50 A
VGE = ±15 V; RG = 15 W
TVJ = 125°C
VGE = ±15 V; RG = 15 W;
TVJ = 125°C
VCEK = 1200 V
Ratings
typ. max.
1200
±20
±30
85
60
290
1.8 2.1
2.1
6.0 6.5
0.5
0.2
500
165
70
40
250
100
4.5
5.5
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
nC
ns
ns
ns
ns
mJ
mJ
150 A
VCE = 900 V; VGE = ±15 V;
RG = 15 W; non-repetitive
(per IGBT)
TVJ = 125°C
10 µs
200 A
0.43 K/W
Output Inverter D1 - D6
Symbol
VRRM
IF25
IF80
VF
Definitions
max. repetitve reverse voltage
forward current
forward voltage
Qrr
IRM
trr
Erec
RthJC
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
Conditions
IF = 60 A; VGE = 0 V
VR = 600 V
diF /dt = -1200 A/µs
IF = 60 A; VGE = 0 V
(per diode)
Ratings
min. typ. max.
TVJ = 25°C
TC = 25°C
TC = 80°C
TVJ = 25°C
TVJ = 125°C
TVJ = 125°C
1200
88
59
1.95 2.2
1.95
8
60
350
2.5
0.6
TC = 25°C unless otherwise stated
Unit
V
A
A
V
V
µC
A
ns
mJ
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110916e
2-8
|
PDF 파일 내의 페이지 : 총 8 페이지
제조업체: IXYS
( ixys )
MIXA60WB1200TEH converter
데이터시트 다운로드 :
[ MIXA60WB1200TEH.PDF ]
[ MIXA60WB1200TEH 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
