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ETC |
Diodes
RSB12JS2
Bi Direction ESD Protection Diode
(Silicon Epitaxial Planer)
RSB12JS2
zApplication
ESD Protection
zFeatures
1) Low capacitance
2) Bi direction
3) Ultra small mold type (EMD6)
zAbsolute maximum ratings (Ta=25°C)
Power dissipation
Junction temperature
Storage temperature
Pd 150 mW/Total
Tj 150 °C
Tstg −55 to 150 °C
zElectrical characteristics (Ta=25°C) (∗Rating of per diode)
Characteristic
Symbol
Test Condition
Zener Voltage
Vz
Iz=
Reverse current
IR
VR=
Junction capacitance
Ct
f=
VR=
∗ Please pay attention to static electricity when handling.
∗ Zener voltage (Vz) shall be measured at 40ms after loading current.
5 mA
9V
1MHz
0V
Standard
MIN.
MAX.
9.6 V
14.4 V
- 0.1µA
1 pF
TYP.
1/3
Diodes
zExternal dimensions (Unit : mm)
1.0 ± 0.1
0.5 0.5
(3) (2) (1)
(4) (5)
(6)
0.22 ±0.05
1.6 ± 0.1
RSB12JS2
0.5 ± 0.05
(3) (2) (1)
0 to 0.1
0.13 ± 0.05
(4) (5) (6)
(3)…N/C
(6)…N/C
zOthers
Characteristic
Equipment Composition
Criterion
IEC-61000-4-2
Charge discharge Capacitance
Discharge resistance
Repeat by 10 times
No erroneous operation
Contact
In air
: 150 pF
: 330Ω
: ± 8 kV
: ± 15 kV
2/3
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