TEA1610T 반도체 회로 부품 판매점
Zero-voltage-switching resonant converter controller
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 NXP Semiconductors |
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
Rev. 03 — 26 March 2007
Product data sheet
1. General description
The TEA1610 is a monolithic integrated circuit implemented in a high-voltage Diffusion
Metal Oxide Semiconductor (DMOS) process. The circuit is a high voltage controller for a
zero-voltage switching resonant converter. The IC provides the drive function for
two discrete power MOSFETs in a half-bridge configuration. It also includes a level-shift
circuit, an oscillator with accurately-programmable frequency range, a latched shut-down
function and a transconductance error amplifier.
To guarantee an accurate 50 % switching duty factor, the oscillator signal passes through
a divide-by-two flip-flop before being fed to the output drivers.
The circuit is very flexible and enables a broad range of applications for different mains
voltages.
VDD
TEA1610
VHS
bridge voltage
supply
(high side)
MOSFET
SWITCH
HALF-
BRIDGE
CIRCUIT
RESONANT
CONVERTER
signal
ground
Fig 1. Basic configuration
power ground
mgu336
2. Features
I Integrated high voltage level-shift
function
I Integrated high voltage bootstrap diode
I Low start-up current (green function)
I Adjustable dead time
I Transconductance error amplifier for
ultra high-ohmic regulation feedback
I Latched shut-down circuit for
overcurrent and overvoltage protection
I Adjustable minimum and maximum
frequencies
I Undervoltage lockout
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
3. Applications
I TV and monitor power supplies
I High voltage power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VHS
IGH(source)
high side driver voltage
high side output source
current
IGL(source)
low side output source
current
VDD(F) = 13 V;
VSH = 0 V;
VGH = 0 V
VGL = 0 V
IGH(sink)
IGL(sink)
fbridge(max)
high side output sink
current
VDD(F) = 13 V;
VSH = 0 V;
VGH = 13 V
low side output sink current VGL = 14 V
maximum bridge frequency CF = 100 pF;
IIFS = 1 mA;
IIRS = 200 µA;
fbridge
=
-f---O----S---C-
2
Min
0
−135
−135
-
-
[1] 450
Typ
-
−180
−180
300
300
500
Max
600
−225
−225
-
-
550
Unit
V
mA
mA
mA
mA
kHz
VI(CM)
common mode input
voltage
[2] - - 2.5 V
[1] The frequency of the oscillator depends on the value of capacitor Cf, the peak-to-peak voltage swing VCF,
and the charge/discharge currents ICF(ch) and ICF(dis).
[2] This parameter applies specifically to the error amplifier.
5. Ordering information
Table 2. Ordering information
Type number
Package
Name
Description
TEA1610P
DIP16
plastic dual in-line package; 16 leads (300 mil); long body
TEA1610T
SO16
plastic small outline package; 16 leads; body width 3.9 mm;
low stand-off height
Version
SOT38-1
SOT109-2
TEA1610T_P_3
Product data sheet
Rev. 03 — 26 March 2007
© NXP B.V. 2007. All rights reserved.
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제조업체: NXP Semiconductors
( nxp )
TEA1610T controller
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[ TEA1610T.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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