파트넘버.co.kr KH29LV800CT 데이터시트 PDF


KH29LV800CT 반도체 회로 부품 판매점

8M-Bit CMOS Single Voltage 3V Only Flash Memory



Macronix 로고
Macronix
KH29LV800CT 데이터시트, 핀배열, 회로
KH29LV800C T/B
FEATURES
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE
3V ONLY FLASH MEMORY
• Extended single - supply voltage range 2.7V to 3.6V
• 1,048,576 x 8/524,288 x 16 switchable
• Single power supply operation
- 3.0V only operation for read, erase and program
operation
• Fast access time: 70/90ns
• Low power consumption
- 20mA maximum active current
- 0.2uA typical standby current
• Command register architecture
- Byte/word Programming (9us/11us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability
- Automatically program and verify data at specified
address
• Erase suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase
• Status Reply
- Data# polling & Toggle bit for detection of program
and erase operation completion.
• Ready/Busy# pin (RY/BY#)
- Provides a hardware method of detecting program or
erase operation completion
• Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Temporary sector unprotected allows code changes
in previously locked sectors
• CFI (Common Flash Interface) compliant
- Flash device parameters stored on the device and
provide the host system to access
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
• Package type:
- 48-pin TSOP
- All Pb-free devices are RoHS Compliant
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
• 10 years data retentionwww.DataSheet.co.kr
GENERAL DESCRIPTION
The KH29LV800C T/B is a 8-mega bit Flash memory
organized as 1M bytes of 8 bits or 512K words of 16
bits. MXIC's Flash memories offer the most cost-effec-
tive and reliable read/write non-volatile random access
memory. The KH29LV800C T/B is packaged in 48-pin
TSOP. It is designed to be reprogrammed and erased in
system or in standard EPROM programmers.
The standard KH29LV800C T/B offers access time as
fast as 55ns, allowing operation of high-speed micropro-
cessors without wait states. To eliminate bus conten-
tion, the KH29LV800C T/B has separate chip enable
(CE#) and output enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
KH29LV800C T/B uses a command register to manage
this functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The KH29LV800C T/B uses a 2.7V~3.6V VCC
supply to perform the High Reliability Erase and auto
Program/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamperes on
address and data pin from -1V to VCC + 1V.
P/N:PM1222
REV. 1.2, DEC. 09, 2005
1
Datasheet pdf - http://www.DataSheet4U.net/


KH29LV800CT 데이터시트, 핀배열, 회로
KH29LV800C T/B
PIN CONFIGURATIONS
48 TSOP (Standard Type) (12mm x 20mm)
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RESET#
NC
NC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
KH29LV800C T/B
48 A16
47 BYTE#
46 GND
45 Q15/A-1
44 Q7
43 Q14
42 Q6
41 Q13
40 Q5
39 Q12
38 Q4
37 VCC
36 Q11
35 Q3
34 Q10
33 Q2
32 Q9
31 Q1
30 Q8
29 Q0
28 OE#
27 GND
26 CE#
25 A0
PIN DESCRIPTION
SYMBOL PIN NAME
A0~A18 Address Input
Q0~Q14 Data Input/Output
Q15/A-1 Q15(Word mode)/LSB addr(Byte mode)
CE# Chip Enable Input
WE#
Write Enable Input
BYTE# Word/Byte Selection input
RESET# Hardware Reset Pin
OE# Output Enable Input
RY/BY# Ready/Busy Output
VCC
Power Supply Pin (2.7V~3.6V)
GND
Ground Pin
www.DataSheet.co.kr
P/N:PM1222
REV. 1.2, DEC. 09, 2005
2
Datasheet pdf - http://www.DataSheet4U.net/




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