MX26LV040 반도체 회로 부품 판매점
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
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 Macronix International |
MX26LV040
Macronix NBitTM Memory Family
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE
3V ONLY HIGH SPEED eLiteFlashTM MEMORY
FEATURES
• Extended single - supply voltage range 3.0V to 3.6V
• 524,288 x 8
• Single power supply operation
www.DataSheet4U-.c3om.0V only operation for read, erase and program
operation
• Fast access time: 55/70ns
• Low power consumption
- 30mA maximum active current
- 30uA typical standby current
• Command register architecture
- Byte Programming (55us typical)
- Sector Erase (Sector structure 64K-Byte x8)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
• Status Reply
- Data# polling & Toggle bit for detection of program
and erase operation completion.
• 2,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Package type:
- 32-pin PLCC
- 32-pin TSOP
- 32-pin PDIP
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
• 20 years data retention
GENERAL DESCRIPTION
The MX26LV040 is a 4-mega bit Flash memory orga-
nized as 512K bytes of 8 bits. MXIC's Flash memories
offer the most cost-effective and reliable read/write non-
volatile random access memory. The MX26LV040 is pack-
aged in 32-pin PLCC, 32-pin TSOP and 32-pin PDIP. It
is designed to be reprogrammed and erased in system
or in standard EPROM programmers.
The standard MX26LV040 offers access time as fast as
55ns, allowing operation of high-speed microprocessors
without wait states. To eliminate bus contention, the
MX26LV040 has separate chip enable (CE#) and output
enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX26LV040 uses a command register to manage this
functionality. The command register allows for 100% TTL
level control inputs and fixed power supply levels during
erase and programming, while maintaining maximum
EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 2,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX26LV040 uses a 3.0V~3.6V VCC supply
to perform the High Reliability Erase and auto Program/
Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
P/N:PM1118
REV. 1.0, NOV. 08, 2004
1
PIN CONFIGURATIONS
32 PLCC
www.DataSheet4U.com
4
A7 5
1 32
30
29 A14
A6 A13
A5 A8
A4
A3 9
MX26LV040
A9
25 A11
A2 OE#
A1 A10
A0 CE#
Q0 13
21 Q7
14 17 20
32 PDIP
A18
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
Q0
Q1
Q2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 VCC
31 WE#
30 A17
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE#
23 A10
22 CE#
21 Q7
20 Q6
19 Q5
18 Q4
17 Q3
MX26LV040
32 TSOP
A11 1
A9 2
A8 3
A13 4
A14 5
A17 6
WE# 7
VCC 8
A18 9
A16 10
A15 11
A12 12
A7 13
A6 14
A5 15
A4 16
MX26LV040
32 OE#
31 A10
30 CE#
29 Q7
28 Q6
27 Q5
26 Q4
25 Q3
24 GND
23 Q2
22 Q1
21 Q0
20 A0
19 A1
18 A2
17 A3
Table 1. PIN DESCRIPTION
SYMBOL PIN NAME
A0~A18 Address Input
Q0~Q7 Data Input/Output
CE# Chip Enable Input
WE#
Write Enable Input
OE# Output Enable Input
VCC
Power Supply Pin (3.0V~3.6V)
GND
Ground Pin
BLOCK STRUCTURE
Table 2. MX26LV040 SECTOR ARCHITECTURE
Sector
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
Sector Size
Byte Mode
64Kbytes
64Kbytes
64Kbytes
64Kbytes
64Kbytes
64Kbytes
64Kbytes
32Kbytes
Address range
Byte Mode (x8)
00000-0FFFF
10000-1FFFF
20000-2FFFF
30000-3FFFF
40000-4FFFF
50000-5FFFF
60000-6FFFF
70000-7FFFF
P/N:PM1118
2
Sector Address
A18 A17 A16 A15 A14
00 0 X X
00 1 X X
01 0 X X
01 1 X X
10 0 X X
10 1 X X
11 0 X X
11 1 X X
A13
X
X
X
X
X
X
X
X
REV. 1.0, NOV. 08, 2004
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제조업체: Macronix International
( macronix )
MX26LV040 cmos
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MX26LV040
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY - Macronix International
