ES25P40 반도체 회로 부품 판매점
4Mbit CMOS 3.0 Volt Flash Memory
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 Excel Semiconductor |
ADVANCED INFORMATION
EE SS II
Excel Semiconductor inc.
ES25P40
4Mbit CMOS 3.0 Volt Flash Memory
with 75Mhz SPI Bus Interface
www.DataSheet4U.com
ARCHITECTURAL ADVANTAGES
• Single power supply operation
- 2.7V -3.6V for read and program operations
• Memory Architecture
- Eight sectors with 512 Kb each
• Program
- Page program ( up to 256 bytes) in 1.5ms (typical)
- Program cycles are on a page by page basis
• Erase
- 0.5s typical sector erase time
- 3s typical bulk erase time
• Endurance
- 100,000 cycles per sector (typical)
• Data Retention
- 20 years (typical)
• Parameter Page
- 256 Byte page independent from main memory
for parameter storage
- Seperate from array, erase time < 20ms
• Device ID
- JEDEC standard two-byte electronic signature
- RES instruction one-byte electronic signature for
backward compatibility
- Manufacturer and device type ID
• Process Technology
- Manufactured on 0.18um process technology
• Package Option
- Industry Standard Pinouts
- 8-pin SO (208mil) package
- All Pb-Free devices are RoHS Compliant
PERFORMANCE CHARACTERISTICS
• Speed
- 75Mhz clock rate (maximum)
• Power Saving Standby Mode
- Standby mode 50uA (max)
- Deep Power Down Mode 1uA (typical)
MEMORY PROTECTION FEATURES
• Memory Protection
- W# pin works in conjunction with Status Register Bits
to protect specified memory areas
- Status Register Block Protection Bits (BP2, BP1, BP0)
in status register configure parts of memory as read
only
SOFTWARE FEATURES
• SPI Bus Compatible Serial Interface
ES25P40
1 Rev. 0D May 11 , 2006
ADVANCED INFORMATION
EE SS II
Excel Semiconductor inc.
GENERAL PRODUCT DESCRIPTION
The ES25P40 device is a 3.0 volt (2.7V to 3.6V)
single power flash memory device. ES25P40 con-
sists of Eight sectors, each with 512 Kb memory.
Data appears on SI input pin when inputting data
into the memory and on the SO output pin when
outputting data from the memory. The devices are
www.DataSheedt4eUs.cigonmed to be programmed in-system with the
standard system 3.0 volt Vcc supply.
The memory can be programmed 1 to 256 bytes at
a time, using the Page Program instruction.
The memory supports Sector Erase and Bulk Erase
instructions.
Each device requires only a 3.0 volt power supply
(2.7V to 3.6V) for both read and write functions.
Internally generated and regulated voltages are pro-
vided for program operations. This device does not
require Vpp supply.
BLOCK DIAGRAM
SRAM
PS
Logic
Array - L
Array - R
RD DATA PATH
IO
ES25P40
2 Rev. 0D May 11 , 2006
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제조업체: Excel Semiconductor
( excel )
ES25P40 cmos
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