WS57C71C-70T 반도체 회로 부품 판매점
HIGH SPEED 32K x 8 CMOS PROM/RPROM
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 STMicroelectronics |
WS57C71C
HIGH SPEED 32K x 8 CMOS PROM/RPROM
• Ultra-Fast Access Time
— 35 ns
• Low Power Consumption
• Fast Programming
KEY FEATURES
• Immune to Latch-UP
— Up to 200 mA
• ESD Protection Exceeds 2000V
• Available in 300 Mil DIP and PLDCC
GENERAL DESCRIPTION
The WS57C71C is a High Performance 256K UV Erasable Electrically Re-Programmable Read Only Memory
(RPROM). It is manufactured in an advanced CMOS technology and utilizes WSI's patented self-aligned split gate
EPROM cell.
The industry standard PROM pin configuration of the WS57C71C provides an easy upgrade path from a 16K x 8
device.
This RPROM is capable of operating at speeds as fast as 35 ns address access time, which enables it to be used
directly with today's fast microprocessors and DSP processors without introducing any wait states. All inputs and
outputs are TTL compatible. The WS57C71C is a low power device even when operated at its fastest speed. The
DIP version is packaged in a 300 mil wide DIP package saving board space for the user.
BLOCK DIAGRAM
9
A6 - A14
ROW
ADDRESSES
ROW
DECODER
EPROM ARRAY
262,144 BITS
9
A0 - A5
COLUMN
ADDRESSES
CS1/ VPP
CS2
CS3
COLUMN
DECODER
SENSE
AMPLIFIERS
8
OUTPUTS
PIN CONFIGURATION
TOP VIEW
Chip Carrier
CERDIP
A9 1
A6
4
5
3
2
1
32 31 30
29
A12
A8 2
A7 3
A5 6
28 A13
A6 4
A4
A3
A2
A1
A0
NC
O0
7 27
8 26
9 25
10 24
11 23
12 22
13 21
14 15 16 17 18 19 20
A14
NC
CS3
CS2
CS1/VPP
O7
O6
A5 5
A4 6
A3 7
A2 8
A1 9
A0 10
O0 11
O1 12
O2 13
O1 O2 NC O3 O4 O5
GND 14
28 VCC
27 A10
26 A11
25 A12
24 A13
23 A14
22 CS3
21 CS2
20 CS1/VPP
19 O7
18 O6
17 O5
16 O4
15 O3
PRODUCT SELECTION GUIDE
PARAMETER
Address Access Time (Max)
CS to Output Valid Time (Max)
WS57C71C-35
35 ns
15 ns
WS57C71C-45
45 ns
20 ns
WS57C71C-55
55 ns
20 ns
WS57C71C-70
70 ns
30 ns
Return to Main Menu
2-55
WS57C71C
ABSOLUTE MAXIMUM RATINGS*
Storage Temperature............................–65° to + 150°C
Voltage on any Pin with
Respect to Ground ....................................–0.6V to +7V
VPP with Respect to Ground...................–0.6V to + 13V
ESD Protection ..................................................>2000V
*NOTICE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at these or any other conditions above
those indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of
time may affect device reliability.
MODE SELECTION
PINS
MODE
CS1/ CS2
VPP
CS3
VCC
OUTPUTS
Read
VIL VIH VIL VCC
DOUT
Output Disable VIH X X VCC High Z
Output Disable X VIL X VCC High Z
Output Disable X X VIH VCC High Z
Program
VPP X VIH VCC
DIN
Program Verify VIL VIH VIL VCC DOUT
Program Inhibit VPP VIH VIL VCC DOUT
OPERATING RANGE
RANGE
TEMPERATURE
Commercial
0°C to +70°C
Industrial
–40°C to +85°C
Military
–55°C to +125°C
VCC
+5V ± 10%
+5V ± 10%
+5V ± 10%
DC READ CHARACTERISTICS Over Operating Range. (See Above)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN MAX UNITS
VIL Input Low Voltage (Note 3)
–0.1 0.8
V
VIH Input High Voltage (Note 3)
2.0 VCC + 0.3
V
VOL Output Low Voltage IOL = 16 mA
0.4 V
VOH Output High Voltage IOH = –4 mA
2.4 V
ICC1
VCC Active Current
(CMOS)
VCC = 5.5 V, f = 0 MHz (Note 1), Comm'l
Output Not Loaded
Industrial
Add 3 mA/MHz for AC Operation Military
30 mA
35 mA
35 mA
ICC2
VCC Active Current
(TTL)
VCC = 5.5 V, f = 0 MHz (Note 2), Comm'l
Output Not Loaded
Industrial
Add 3 mA/MHz for AC Operation Military
50 mA
60 mA
60 mA
ILI Input Leakage
Current
VIN = 5.5V or Gnd
ILO Output Leakage
Current
VOUT = 5.5 V or Gnd
–10 10 µA
–10 10 µA
NOTES:
1. CMOS inputs: GND ± 0.3V or VCC ± 0.3V.
2. TTL inputs: VIL ≤ 0.8V, VIH ≥ 2.0V.
3. These are absolute voltages with respect to device ground pin and include all overshoots due to system and/or tester noise.
Do not attempt to test these values without suitable equipment.
2-56
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WS57C71C-70T cmos
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