W24512AT-35 반도체 회로 부품 판매점
64K X 8 HIGH SPEED CMOS STATIC RAM
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 Winbond |
W24512A
64K × 8 HIGH SPEED CMOS STATIC RAM
GENERAL DESCRIPTION
The W24512A is a high speed, low power CMOS static RAM organized as 65536 × 8 bits that
operates on a single 5-volt power supply. This device is manufactured using Winbond's high
performance CMOS technology.
FEATURES
• High speed access time: 15/20/25/35 nS (max.)
• Low power consumption:
− Active: 500 mW (typ.)
• Single +5V power supply
• Fully static operation
• All inputs and outputs directly TTL compatible
• Three-state outputs
• Available packages: 32-pin 300 mil SOJ,
skinny DIP, 450 mil SOP, and standard type
one TSOP
PIN CONFIGURATIONS
BLOCK DIAGRAM
A11
A9
A8
A13
WE
CS2
A15
VDD
NC
NC
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
NC
NC
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 VDD
31 A15
30 CS2
29 WE
28 A13
27 A8
26 A9
25 A11
24 OE
23 A1 0
22 CS1
21 I/O8
20 I/O7
19 I/O6
18 I/O5
17 I/O4
32-pin
TSOP
32 OE
31 A10
30 CS1
29 I/O8
28 I/O7
27 I/O6
26 I/O5
25 I/O4
24 VSS
23 I/O3
22 I/O2
21 I/O1
20 A0
19 A1
18 A2
17 A3
V DD
V SS
A0
.
.
A15
DECODER
CS2
CS1
OE
WE
CONTROL
CCOORREE
ARRAY
DATA I/O
I/O. 1
.
I/O8
PIN DESCRIPTION
SYMBOL
A0−A15
I/O1−I/O8
CS1, CS2
WE
OE
VDD
VSS
NC
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Select Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
Publication Release Date: March 1999
- 1 - Revision A7
W24512A
TRUTH TABLE
CS1 CS2 OE
H XX
X LX
L HH
L HL
L HX
WE
X
X
H
H
L
MODE
Not Selected
Not Selected
Output Disable
Read
Write
I/O1−I/O8
High Z
High Z
High Z
Data Out
Data In
VDD CURRENT
ISB, ISB1
ISB, ISB1
IDD
IDD
IDD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
Supply Voltage to VSS Potential
Input/Output to VSS Potential
Allowable Power Dissipation
Storage Temperature
Operating Temperature
RATING
-0.5 to +7.0
-0.5 to VDD +0.5
1.0
-65 to +150
0 to +70
UNIT
V
V
W
°C
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(VDD = 5V ±10%, VSS = 0V, TA = 0 to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
Input Low Voltage
Input High Voltage
Input Leakage Current
VIL -
VIH -
ILI VIN = VSS to VDD
Output Leakage
Current
Output Low Voltage
Output High Voltage
Operating Power
Supply Current
ILO VI/O = VSS to VDD
CS1 = VIH or CS2 = VIL or
OE = VIH or WE = VIL
VOL IOL = +8.0 mA
VOH IOH = -4.0 mA
IDD CS1 = VIL, CS2 = VIH 15
I/O = 0 mA, Cycle = min. 20
Duty = 100%
25
35
Standby Power
Supply Current
ISB CS1 = VIH or CS2 = VIL
Cycle = min., Duty = 100%
ISB1 CS1 ≥ VDD -0.2V or
CS2 ≤ 0.2V
Note: Typical characteristics are at VDD = 5V, TA = 25° C.
MIN.
-0.5
+2.2
-10
-10
TYP.
-
-
-
-
MAX.
+0.8
VDD +0.5
+10
+10
UNIT
V
V
µA
µA
--
2.4 -
--
--
--
--
0.4 V
-V
200 mA
160
160
140
30 mA
10 mA
-2-
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제조업체: Winbond
( winbond )
W24512AT-35 cmos
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[ W24512AT-35.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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