K6X8016T3B 판매점 - 512Kx16 bit Low Power Full CMOS Static RAM

K6X8016T3B 반도체 회로 부품 판매점

512Kx16 bit Low Power Full CMOS Static RAM

Samsung semiconductor

K6X8016C3B Family

Document Title

512Kx16 bit Low Power Full CMOS Static RAM

CMOS SRAM

Revision History

Revision No. History

0.0 Initial draft

0.1 Revised

- Deleted 44-TSOP2-400R package type.

- Added Commercial product.

0.11

Revised

- Errata correction : corrected commercial product family name from

K6X8016C3B-F to K6X8016C3B-B in PRODUCT FAMILY.

1.0 Finalized

- Changed ICC from 12mA to 6mA

- Changed ICC1 from 12mA to 7mA

- Changed ICC2 from 60mA to 35mA

- Changed ISB from 3mA to 0.4mA

- Changed ISB1(Commercial) from 40µA to 25µA

- Changed ISB1(industrial) from 40µA to 25µA

- Changed ISB1(Automotive) from 50µA to 40µA

- Changed IDR(Commercial) from 30µA to 15µA

- Changed IDR(industrial) from 30µA to 15µA

- Changed IDR(Automotive) from 40µA to 30µA

Draft Date

October 31, 2002

Remark

Preliminary

December 11, 2002 Preliminary

March 26, 2003

Preliminary

September 16, 2003 Final

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.

1 Revision 1.0

September 2003

K6X8016C3B Family

CMOS SRAM

512Kx16 bit Low Power Full CMOS Static RAM

FEATURES

• Process Technology: Full CMOS

• Organization: 512K x16

• Power Supply Voltage: 4.5~5.5V

• Low Data Retention Voltage: 2.0V(Min)

• Three state output and TTL Compatible

• Package Type: 44-TSOP2-400F

GENERAL DESCRIPTION

The K6X8016C3B families are fabricated by SAMSUNG′s

advanced full CMOS process technology. The families support

various operating temperature range for user flexibility of sys-

tem design. The families also support low data retention voltage

for battery back-up operation with low data retention current.

PRODUCT FAMILY

Product Family Operating Temperature Vcc Range Speed

K6X8016C3B-B

Commercial(0~70°C)

K6X8016C3B-F

Industrial(-40~85°C)

K6X8016C3B-Q Automotive(-40~125°C)

1. The parameter is measured with 50pF test load.

4.5~5.5V

551)/70ns

Power Dissipation

Standby

(ISB1, Max)

25µA

Operating

(ICC2, Max)

35mA

40µA

PKG Type

44-TSOP2-400F

PIN DESCRIPTION

FUNCTIONAL BLOCK DIAGRAM

A4 1

44 A5

A3 2

43 A6

A2 3

42 A7

A1 4

41 OE

A0 5

40 UB

CS 6

39 LB

I/OI 7

38 I/O16

I/O2 8

37 I/O15

I/O3 9

36 I/O14

I/O4 10

35 I/O13

Vcc 11 44-TSOP2 34 Vss

Vss 12

I/O5 13

Forward 33 Vcc

32 I/O12

I/O6 14

31 I/O11

I/O7 15

30 I/O10

I/O8 16

29 I/O9

WE 17

28 A8

A18 18

27 A9

A17 19

26 A10

A16 20

25 A11

A15 21

24 A12

A14 22

23 A13

Name

Function

CS Chip Select Input

OE Output Enable Input

WE Write Enable Input

A0~A18 Address Inputs

I/O1~I/O16 Data Inputs/Outputs

Name

Function

Vcc Power

Vss Ground

UB Upper Byte(I/O9~16)

LB Lower Byte(I/O1~8)

Clk gen.

Row

Addresses

Row

select

I/O1~I/O8

I/O9~I/O16

Data

cont

Data

cont

Data

cont

WE Control Logic

Precharge circuit.

Memory array

I/O Circuit

Column select

Column Addresses

Vcc

Vss

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

2 Revision 1.0

September 2003

PDF 파일 내의 페이지 : 총 9 페이지

제조업체: Samsung semiconductor

( samsung )

K6X8016T3B cmos

데이터시트 다운로드 :

[ K6X8016T3B.PDF ]

[ K6X8016T3B 다른 제조사 검색 ]

국내 전력반도체 판매점

상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743

일반적인 전자부품 판매점

디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14

K6X8016T3B 반도체 회로 부품 판매점

512Kx16 bit Low Power Full CMOS Static RAM

국내 전력반도체 판매점

일반적인 전자부품 판매점

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