K6X8016C3B 반도체 회로 부품 판매점
512Kx16 bit Low Power Full CMOS Static RAM
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 Samsung semiconductor |
K6X8008T2B Family
Document Title
1Mx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 Initial draft
0.1 Revised
- Deleted 44-TSOP2-400R package type.
1.0 Finalized
- Changed ICC2 from 40mA to 30mA
- Changed ISB1(industrial) from 30µA to 15µA
- Changed ISB1(Automotive) from 40µA to 25µA
Draft Date
October 31, 2002
Remark
Preliminary
December 11, 2002 Preliminary
September 16, 2003 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
September 2003
K6X8008T2B Family
CMOS SRAM
1Mx8 bit Low Power and Low Voltage full CMOS Static RAM
FEATURES
• Process Technology: Full CMOS
• Organization: 1M x8
• Power Supply Voltage: 2.7~3.6V
• Low Data Retention Voltage: 1.5V(Min)
• Three state outputs
• Package Type: 44-TSOP2-400F
GENERAL DESCRIPTION
The K6X8008T2B families are fabricated by SAMSUNG′s
advanced full CMOS process technology. The families sup-
port various operating temperature range for user flexibility of
system design. The families also support low data retention
voltage for battery back-up operation with low data retention
current.
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range
K6X8008T2B-F
K6X8008T2B-Q
Industrial(-40~85°C)
Automotive(-40~125°C)
2.7~3.6V
1. This parameter is measured with 50pF test load (Vcc=3.0~3.6V).
Speed
551)/70ns
70ns
Power Dissipation
Standby
(ISB1, Max)
15µA
25µA
Operating
(ICC2, Max)
30mA
PKG Type
44-TSOP2-400F
PIN DESCRIPTION
A4 1
44 A5
A3 2
43 A6
A2 3
42 A7
A1 4
41 OE
A0 5
40 CS2
CS1 6
39 A8
NC 7
38 NC
NC 8
37 NC
I/O1 9
36 I/O8
I/O2 10
35 I/O7
Vcc 11 44-TSOP2 34 Vss
Vss 12
I/O3 13
Forward
33 Vcc
32 I/O6
I/O4 14
31 I/O5
NC 15
30 NC
NC 16
29 NC
WE 17
28 A9
A19 18
27 A10
A18 19
26 A11
A17 20
25 A12
A16 21
24 A13
A15 22
23 A14
Name
Function
Name
Function
CS1, CS2 Chip Select Inputs
Vcc Power
OE Output Enable Input Vss Ground
WE Write Enable Input A0~A19 Address Inputs
I/O1~I/O8 Data Inputs/Outputs NC No Connect
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
Row
Addresses
Row
select
Memory array
1024 rows
1024×8 columns
Vcc
Vss
I/O1~I/O8
Data
cont
Data
cont
I/O Circuit
Column select
Column Addresses
CS1
CS2
Control Logic
OE
WE
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2 Revision 1.0
September 2003
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제조업체: Samsung semiconductor
( samsung )
K6X8016C3B cmos
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