K6X4016T3F 반도체 회로 부품 판매점
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
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 Samsung semiconductor |
K6X4016T3F Family
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 Initial draft
Draft Date
July 29, 2002
0.1 Revised
- Added Commercial product
- Deleted 44-TSOP2-400R Package Type.
- Added 55ns product(@ 3.0V~3.6V)
December 2, 2002
1.0 Finalized
August 8, 2003
Revised
- Changed ICC(Operating power supply current) from 4mA to 2mA
- Changed ICC1(Average operating current) from 4mA to 3mA
- Changed ICC2(Average operating current) from 40mA to 25mA
- Changed ISB1(Standby Current(CMOS), Commercial)
from 15µA to 10µA
- Changed ISB1(Standby Current(CMOS), Industrial)
from 20µA to 10µA
- Changed ISB1(Standby Current(CMOS), Automotive)
from 30µA to 20µA
- Changed IDR(Data retention current, Commercial)
from 15µA to 10µA
- Changed IDR(Data retention current, Industrial)
from 20µA to 10µA
- Changed IDR(Data retention current, Automotive)
from 30µA to 20µA
Remark
Preliminary
Preliminary
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
August 2003
K6X4016T3F Family
CMOS SRAM
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
• Process Technology: Full CMOS
• Organization: 256K x16
• Power Supply Voltage: 2.7~3.6V
• Low Data Retention Voltage: 2V(Min)
• Three State Outputs
• Package Type: 44-TSOP2-400F
GENERAL DESCRIPTION
The K6X4016T3F families are fabricated by SAMSUNG′s
advanced CMOS process technology. The families support var-
ious operating temperature range and have 44-TSOP2 pack-
age type for user flexibility of system design. The families also
support low data retention voltage for battery back-up operation
with low data retention current.
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range Speed(ns)
K6X4016T3F-B
Commercial(0~70°C)
K6X4016T3F-F
Industrial(-40~85°C)
2.7~3.6V
K6X4016T3F-Q Automotive(-40~125°C)
1. This parameter is measured with 30pF test load (Vcc=3.0~3.6V).
2. The parameter is measured with 30pF test load.
551)/702)/85ns
702)/85ns
Power Dissipation
Standby
(ISB1, Max)
10µA
10µA
Operating
(ICC2, Max)
25mA
20µA
PKG Type
44-TSOP2-400F
PIN DESCRIPTION
A4 1
44 A5
A3 2
43 A6
A2 3
42 A7
A1 4
41 OE
A0 5
40 UB
CS 6
39 LB
I/OI 7
38 I/O16
I/O2 8
37 I/O15
I/O3 9
36 I/O14
I/O4 10
35 I/O13
Vcc 11 44-TSOP2 34 Vss
Vss 12
I/O5 13
Forward 33 Vcc
32 I/O12
I/O6 14
31 I/O11
I/O7 15
30 I/O10
I/O8 16
29 I/O9
WE 17
28 NC
A17 18
27 A8
A16 19
26 A9
A15 20
25 A10
A14 21
24 A11
A13 22
23 A12
Name Function
Name Function
CS Chip Select Input
Vcc Power
OE Output Enable Input Vss Ground
WE Write Enable Input LB Lower Byte (I/O1~8)
A0~A17 Address Inputs
UB Upper Byte (I/O9~16)
I/O1~I/O16 Data Input/Output NC No Connection
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
Row
Addresses
Row
select
Memory array
I/O1~I/O8
I/O9~I/O16
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
Column Addresses
WE
OE Control
UB logic
LB
CS
Vcc
Vss
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2 Revision 1.0
August 2003
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제조업체: Samsung semiconductor
( samsung )
K6X4016T3F cmos
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