K6X4008T1F-GQ85 반도체 회로 부품 판매점
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
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 Samsung semiconductor |
K6X4008T1F Family
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 Initial Draft
Draft Data
July 29, 2002
0.1 Revised
- Added 55ns product( Vcc = 3.0V~3.6V)
October 14, 2002
0.2 Revised
- Added Commercial product
December 2, 2002
0.21
Revised
March 26, 2003
- Errata correction : corrected commercial product family name from
K6X4008T1F-F to K6X4008T1F-B in PRODUCT FAMILY.
1.0 Finalized
- Changed ICC from 4mA to 2mA
- Changed ICC1 from 4mA to 3mA
- Changed ICC2 from 30mA to 25mA
- Changed ISB1(Commercial) from 15µA to 10µA
- Changed ISB1(industrial) from 20µA to 10µA
- Changed ISB1(Automotive) from 30µA to 20µA
- Changed IDR(Commercial) from 15µA to 10µA
- Changed IDR(industrial) from 20µA to 10µA
- Changed IDR(Automotive) from 30µA to 20µA
September 16, 2003
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
September 2003
K6X4008T1F Family
CMOS SRAM
512K×8 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
• Process Technology: Full CMOS
• Organization: 512K×8
• Power Supply Voltage: 2.7~3.6V
• Low Data Retention Voltage: 2V(Min)
• Three State Outputs
• Package Type: 32-SOP-525, 32-TSOP2-400F/R
32-TSOP1-0813.4F
GENERAL DESCRIPTION
The K6X4008T1F families are fabricated by SAMSUNG′s
advanced full CMOS process technology. The families support
various operating temperature range and have various pack-
age types for user flexibility of system design. The families also
support low data retention voltage for battery back-up operation
with low data retention current.
PRODUCT FAMILY
Product Family
K6X4008T1F-B
K6X4008T1F-F
Operating Temperature
Commercial(0~70°C)
Industrial(-40~85°C)
Vcc
Range
2.7~3.6V
Speed
551)/702)/85ns
Power Dissipation
Standby Operating
(ISB1, Max) (ICC2, Max)
10µA
10µA
25mA
K6X4008T1F-Q Automotive(-40~125°C)
702)/85ns
20µA
PKG Type
32-SOP-525, 32-TSOP1-0813.4F
32-TSOP2-400F/R
32-SOP-525, 32-TSOP1-0813.4F
32-TSOP2-400F
1. This parameter is measured in the voltage range of 3.0V~3.6V with 30pF test load.
2. This parameter is measured with 30pF test load.
PIN DESCRIPTION
A18 1
32
A16 2
31
A14 3
30
A12 4
29
A7 5
28
A6 6
27
A5 7
26
A4
8
32-SOP
32-TSOP2
25
A3 9 (Forward) 24
A2 10
23
A1 11
22
A0 12
21
I/O1 13
20
I/O2 14
19
I/O3 15
18
VSS 16
17
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
32-TSOP2
(Reverse)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
A11
A9
A8
A13
WE
A17
A15
VCC
A18
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-STSOP1
(Forward)
32 OE
31 A10
30 CS
29 I/O8
28 I/O7
27 I/O6
26 I/O5
25 I/O4
24 VSS
23 I/O3
22 I/O2
21 I/O1
20 A0
19 A1
18 A2
17 A3
Name Function
Name Function
A0~A18 Address Inputs
Vcc Power
WE Write Enable Input
Vss Ground
CS Chip Select Input I/O1~I/O8 Data Inputs/Outputs
OE Output Enable Input
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
Row
Addresses
Row
select
Memory array
I/O1
Data
I/O Circuit
I/O8 cont Column select
Data
cont
Column Addresses
CS
Control
WE logic
OE
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2 Revision 1.0
September 2003
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( samsung )
K6X4008T1F-GQ85 cmos
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K6X4008T1F-GQ85
512Kx8 bit Low Power and Low Voltage CMOS Static RAM - Samsung semiconductor
