K6X0808T1D-YQ85 반도체 회로 부품 판매점
32Kx8 bit Low Power CMOS Static RAM
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 Samsung semiconductor |
K6X0808T1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 Initial draft
0.1 revised
- errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type
0.2 revised
- Added commercial product.
1.0 Finalized
- Changed ICC from 3mA to 2mA
- Changed ICC2 from 25mA to 20mA
- Changed ISB from 3mA to 0.4mA
- Changed ISB1 for K6X0808T1D-F from 10µA to 6µA
- Changed ISB1 for K6X0808T1D-F from 20µA to 10µA
- Changed IDR for K6X0808T1D-F 10µA to 6µA
- Changed IDR for K6X0808T1D-Q 20µA to 10µA
- Errata correction
Draft Data
October 09, 2002
November 08, 2002
Remark
Preliminary
Preliminary
March 27, 2003
Preliminary
December 16, 2003 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
December 2003
K6X0808T1D Family
CMOS SRAM
32Kx8 bit Super Low Power and Low Voltage full CMOS Static RAM
FEATURES
• Process Technology: Full CMOS28-
• Organization: 32K x 8
• Power Supply Voltage: 2.7~3.6V
• Low Data Retention Voltage: 1.5V(Min)
• Three state outputs
• Package Type: 28-SOP-450, 28-TSOP1-0813.4F/R
GENERAL DESCRIPTION
The K6X0808T1D families are fabricated by SAMSUNG′s
advanced CMOS process technology. The families support
verious operating temperature ranges and have various pack-
age types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range
Speed
Power Dissipation
Standby Operating
(ISB1, Max) (ICC2, Max)
PKG Type
K6X0808T1D-B
K6X0808T1D-F
K6X0808T1D-Q
Industrial(0~70°C)
Industrial(-40~85°C)
Automotive(-40~125°C)
2.7~3.6V 701)/85ns
6µA
10µA
25mA
28-SOP-450, 28-TSOP1-0813.4F/R
28-SOP-450, 28-TSOP1-0813.4F
1. The parameters are tested with 30pF test load
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
1 28
2 27
3 26
4 25
5 24
6 23
7 22
8 28-SOP 21
9 20
10 19
11 18
12 17
13 16
14 15
OE
A11
A9
A8
VCC A13
WE
WE
VCC
A13 A14
A12
A8 A7
A6
A9 A5
A11 A4
A3
OE
A10 A3
A4
CS A5
A6
I/O8
A7
I/O7 A12
A14
I/O6 VCC
WE
I/O5 A13
I/O4 A8
A9
A11
OE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
14
13
12
11
10
9
8
7
6
5
4
3
2
1
28-TSOP
Type1 - Forward
28-TSOP
Type1 - Reverse
28 A10
27 CS
26 I/O8
25 I/O7
24 I/O6
23 I/O5
22 I/O4
21 VSS
20 I/O3
19 I/O2
18 I/O1
17 A0
16 A1
15 A2
15 A2
16 A1
17 A0
18 I/O1
19 I/O2
20 I/O3
21 VSS
22 I/O4
23 I/O5
24 I/O6
25 I/O7
26 I/O8
27 CS
28 A10
Pin Name Function Pin Name
Function
A0~A14 Address Inputs
I/O1~I/O8 Data Inputs/Outputs
WE Write Enable Input
Vcc Power
CS Chip Select Input
Vss Ground
OE Output Enable Input NC No connect
Row
Addresses
I/O1
I/O8
CS1
Control
WE logic
OE
Clk gen.
Row
select
Data
cont
Data
cont
Precharge circuit.
Memory array
I/O Circuit
Column select
Column Addresses
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2 Revision 1.0
December 2003
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( samsung )
K6X0808T1D-YQ85 cmos
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