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CXK77B3611AGB-6 반도체 회로 부품 판매점

High Speed Bi-CMOS Synchronous Static RAM



Sony Corporation 로고
Sony Corporation
CXK77B3611AGB-6 데이터시트, 핀배열, 회로
CXK77B3611AGB -5/6
High Speed Bi-CMOS Synchronous Static RAM
Preliminary
For the availability of this product, please contact the sales office.
Description
The CXK77B3611AGB-5/6 is a high speed 1M bit
Bi-CMOS synchronous static RAM organized as
32768 words by 36 bits. This SRAM integrates input
registers, high speed SRAM and write buffer onto a
single monolithic IC and features the delayed write
system to reduce the dead cycles.
119 pin BGA (Plastic)
Features
Fast cycle time
(Cycle) (Frequency)
CXK77B3611AGB-5 5ns
200MHz
-6 6ns
167MHz
Inputs and outputs are GTL/HSTL compatible
Controlled Impedance Driver
Single 3.3V power supply: 3.3V±0.15V
Byte-write possible
OE asynchronization
JTAG test circuit
Package 119TBGA
4 kinds of synchronous operation mode
Register-Register mode (R-R mode)
Register-Flow Thru mode (R-F mode)
Register-Latch mode (R-L mode)
Dual clock mode (D-C mode)
Function
32768 word x 36bit High Speed Bi-CMOS Synchronous SRAM
Structure
Silicon gate Bi-CMOS IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
PE96812


CXK77B3611AGB-6 데이터시트, 핀배열, 회로
Block Diagram
CXK77B3611AGB
15 Input
A0 to 14
Reg.
Write
Store
Reg.
2:1
Mux
Add.
32K × 36
Write
pulse
Dout
Din
2:1 Output
Mux latch
Reg.
S Reg.
Read
Comp.
W Reg.
4
BW
a to d
Reg.
Self
Time
Write
Logic
K/K
C/C
M1 Mode
M2 Control
Output
Clock
G
DQ
–2–




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CXK77B3611AGB-6 cmos

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