CXK5T81000AYN 반도체 회로 부품 판매점
131072-word X 8-bit High Speed CMOS Static RAM
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 Sony Corporation |
CXK5T81000ATN/AYN -10LLX/12LLX
131072-word × 8-bit High Speed CMOS Static RAM Preliminary
For the availability of this product, please contact the sales office.
Description
The CXK5T81000ATN/AYN is a high speed
CMOS static RAM organized as 131072-words by
8-bits.
Special feature are low power consumption and
high speed.
The CXK5T81000ATN/AYN is a suitable RAM for
portable equipment with battery back up.
CXK5T81000ATN
32 pin TSOP (Plastic)
CXK5T81000AYN
32 pin TSOP (Plastic)
Features
• Extended operating temperature range:
–25 to +85°C
• Wide supply voltage range operation: 2.7 to 3.6V
• Fast access time:
(Access time)
3.0V operation -10LLX 100ns (Max.)
-12LLX 120ns (Max.)
3.3V operation -10LLX 85ns (Max.)
-12LLX 100ns (Max.)
• Low standby current:
28µA (Max.)
• Low data retention current: 24µA (Max.)
• Low power data retention: 2.0V (Min.)
• Package 8mm × 13.4mm 32 pin TSOP package
Function
131072-word × 8-bit static RAM
Structure
Silicon gate CMOS IC
Block Diagram
A10
A11
A9
A8
A13
A15
Buffer
A16
A14
A12
A7
A6
A5
A4
A3 Buffer
A2
A1
A0
OE
Buffer
WE
CE1
CE2
Row
Decoder
Memory
Matrix
1024 × 1024
VCC
GND
I/O Gate
Column
Decoder
I/O Buffer
I/O1 I/O8
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
PE96726-PS
CXK5T81000ATN/AYN
Pin Configuration (Top View)
A11 1
A9 2
A8 3
A13 4
WE 5
CE2 6
A15 7
VCC 8
NC 9
A16 10
A14 11
A12 12
A7 13
A6 14
A5 15
A4 16
A4 16
A5 15
A6 14
A7 13
A12 12
A14 11
A16 10
NC 9
VCC 8
A15 7
CE2 6
WE 5
A13 4
A8 3
A9 2
A11 1
CXK5T81000ATN
(Standard Pinout)
CXK5T81000AYN
(Mirror Image Pinout)
32 OE
31 A10
30 CE1
29 I/O8
28 I/O7
27 I/O6
26 I/O5
25 I/O4
24 GND
23 I/O3
22 I/O2
21 I/O1
20 A0
19 A1
18 A2
17 A3
17 A3
18 A2
19 A1
20 A0
21 I/O1
22 I/O2
23 I/O3
24 GND
25 I/O4
26 I/O5
27 I/O6
28 I/O7
29 I/O8
30 CE1
31 A10
32 OE
Pin Description
Symbol
Description
A0 to A16 Address input
I/O1 to I/O8 Data input output
CE1, CE2 Chip enable 1, 2 input
WE Write enable input
OE Output enable input
VCC Power supply
GND
Ground
NC No connection
Absolute Maximum Ratings
(Ta = 25°C, GND = 0V)
Item
Supply voltage
Input voltage
Input and output voltage
Allowable power dissipation
Operating temperature
Symbol
Rating
VCC –0.5 to +4.6
VIN –0.5∗1 to VCC + 0.5
VI/O –0.5∗1 to VCC + 0.5
PD 0.7
Topr
–25 to +85
Unit
V
V
V
W
°C
Storage temperature
Tstg
–55 to +150
°C
Soldering temperature · time Tsolder
235 · 10
∗1 VIN, VI/O = –3.0V Min. for pulse width less than 50ns.
°C · s
Truth Table
CE1 CE2 OE WE
Mode
H × × × Not selected
× L × × Not selected
L H H H Output disable
L H L H Read
L H × L Write
× : “H” or “L”
I/O pin
High Z
High Z
High Z
Data out
Data in
VCC Current
ISB1, ISB2
ISB1, ISB2
ICC1, ICC2, ICC3
ICC1, ICC2, ICC3
ICC1, ICC2, ICC3
DC Recommended Operating Conditions
Item
Symbol
VCC = 2.7 to 3.6V
Min. Typ. Max.
Supply voltage
VCC 2.7 3.3 3.6
Input high voltage
VIH
2.4 — VCC + 0.3
Input low voltage
VIL
–0.3∗2
—
0.4
∗2 VIL = –3.0V Min. for pulse width less than 50ns.
–2–
(Ta = –25 to +85°C, GND = 0V)
VCC = 3.3V ± 0.3V
Min. Typ. Max.
Unit
3.0 3.3 3.6
2.2
–0.3∗2
— VCC + 0.3 V
— 0.6
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( sony )
CXK5T81000AYN cmos
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국내 전력반도체 판매점
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