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CXK58512M 반도체 회로 부품 판매점

65536-word X 8-bit High Speed CMOS Static RAM



Sony Corporation 로고
Sony Corporation
CXK58512M 데이터시트, 핀배열, 회로
CXK58512TM/M -55LL/70LL/10LL
65536-word × 8-bit High Speed CMOS Static RAM
For the availability of this product, please contact thUendesradeleveslopomfefnitce.
Description
The CXK58512TM/M is a high speed CMOS static
RAM organized as 65536-words by 8 bits.
CXK58512TM
32 pin TSOP (Plastic)
CXK58512M
32 pin SOP (Plastic)
A polysilicon TFT cell technology realized extremely
low stand-by current and higher data retention
stability.
Special feature are low power consumption, high
speed.
The CXK58512TM/M is a suitable RAM for portable
equipment with battery back up.
Block Diagram
Features
Fast access time
(Access time)
-55LL
55ns (Max.)
-70LL
70ns (Max.)
-10LL
100ns (Max.)
Low standby current
10µA (Max.)
Low data retention current
6µA (Max.)
Single +5V supply: +5V ± 10%
Low voltage data retention: 2.0V (Min.)
Broad package line-up
CXK58512TM 8mm × 20mm 32 pin TSOP package
CXK58512M 525mil 32 pin SOP Package
A15
A13
A8
A11
A9
A7
A6
A5
A14
A12
A4
A3
A10
A0
A2
A1
Buffer
Row
Decoder
Memory
Matrix
1024 × 512
VCC
GND
Buffer
I/O Gate
Column
Decoder
Function
65536-word × 8 bit static RAM
Structure
Silicon gate CMOS IC
OE
WE
CE1
CE2
Buffer
I/O Buffer
I/O1 I/O8
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E94915A58-PK


CXK58512M 데이터시트, 핀배열, 회로
CXK58512TM/M
Pin Configuration (Top View)
A11 1
A9 2
A8 3
A13 4
WE 5
CE2 6
A15 7
Vcc 8
NC 9
NC 10
A14 11
A12 12
A7
13
A6
A5 14
A4 15
16
CXK58512TM
32 OE
31 A10
30 CE1
29 I/O8
28 I/O7
27 I/O6
26 I/O5
25 I/O4
24 GDN
23 I/O3
22 I/O2
21 I/O1
20 A0
19 A1
18 A2
A3
17
NC 1
NC 2
A14 3
A12 4
A7 5
A6 6
A5
7
A4
8
A3
9
A2
A1
1
0
A0 1
1
I/O1 12
I/O2 1
I/O3
3
1
GND
4
15
16
32 Vcc
31 A15
30 CE2
29 WE
28 A13
27 A8
A9
26
A11
25
OE
24 A10
23 CE1
22 I/O8
21 I/O7
20 I/O6
19 I/O5
I/O4
18
17
Pin Description
Symbol
Description
A0 to A15 Address input
I/O1 to I/O8 Data input output
CE1, CE2 Chip enable 1, 2 input
WE Write enable input
OE Output enable input
VCC Power supply
GND
Ground
NC No connection
CXK58512M
Absolute Maximum Ratings
(Ta = 25°C, GND = 0V)
Item
Supply voltage
Input voltage
Input and output voltage
Allowable power dissipation
Operating temperature
Symbol
Rating
VCC –0.5 to +7.0
VIN –0.5to VCC + 0.5
VI/O –0.5to VCC + 0.5
PD 0.7
Topr
0 to +70
Unit
V
V
V
W
°C
Storage temperature
Tstg
–55 to +150
°C
Soldering temperature • time Tsolder
235 • 10
VIN, VI/O = –3.0V Min. for pulse width less than 50ns.
°C • s
Truth Table
CE1 CE2 OE WE
Mode
H × × × Not selected
× L × × Not selected
L H H H Output disable
L H L H Read
L H × L Write
×: "H" or "L"
I/O pin
High Z
High Z
High Z
Data out
Data in
VCC Current
ISB1, ISB2
ISB1, ISB2
ICC1, ICC2, ICC3
ICC1, ICC2, ICC3
ICC1, ICC2, ICC3
DC Recommended Operating Conditions
Item Symbol Min.
Supply voltage
VCC 4.5
Input high voltage
VIH 2.2
Input low voltage
VIL –0.3
VIL = –3.0V Min. for pulse width less than 50ns.
(Ta = 0 to +70°C, GND = 0V)
Typ. Max. Unit
5.0 5.5 V
— VCC + 0.3 V
— 0.8 V
–2–




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CXK58512M cmos

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