CXK582000YM 반도체 회로 부품 판매점
262144-word X 8-bit High Speed CMOS Static RAM
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 Sony Corporation |
CXK582000TM/YM/M -85LL/10LL
262144-word × 8-bit High Speed CMOS Static RAM Preliminary
For the availability of this product, please contact the sales office.
Description
The CXK582000TM/YM/M is a high speed CMOS
static RAM organized as 262144-words by 8 bits.
A polysilicon TFT cell technology realized
extremely low stand-by current and higher data
retention stability.
Special feature are low power consumption and
high speed and board package line-up.
The CXK582000TM/YM/M is a suitable RAM for
portable equipment with battery back up.
Features
• Fast access time
(Access time)
-85LL
85ns (Max.)
-10LL
100ns (Max.)
• Low standby current
40µA (Max.)
• Low data retention current 24µA (Max.)
• Single +5V supply: 4.5V to 5.5V.
• Low voltage date retention : 2.0V (Min.)
• Broad package line-up
CXK582000TM/YM
8mm × 20mm 32 pin
TSOP Package
CXK582000M
525mil 32 pin
SOP Package
Function
262144 word x 8 bit static RAM
CXK582000TM
32 pin TSOP (PIastic)
CXK582000YM
32 pin TSOP (PIastic)
CXK582000M
32 pin SOP (PIastic)
Block Diagram
A10
A11
A9
A8
A13
A15
A17
A16
Buffer
Row
Decoder
Memory
Matrix
2048 × 1024
VCC
GND
A14
A12
A7
Structure
Silicon gate CMOS IC
A6
A5
A4
A3 Buffer
A2
A1
A0
I /O Gate
Column
Decoder
OE
Buffer
WE
CE1
CE2
I /O Buffer
I/O1 I/O8
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E94234-ST
Pin Configuration (Top View)
A11 1
A9 2
A8 3
A13 4
WE 5
CE2 6
A15 7
Vcc 8
A17 9
A16 10
A14 11
A12 12
A7 13
A6 14
A5 15
A4 16
A4 16
A5 15
A6 14
A7 13
A12 12
A14 11
A16 10
A17 9
Vcc 8
A15 7
CE2 6
WE 5
A13 4
A8 3
A9 2
A11 1
CXK582000TM
(Standard Pinout)
CXK582000YM
(Mirror image Pinout)
CXK582000TM/YM/M
Pin Description
32 OE
31 A10
30 CE1
29 I/O8
28 I/O7
27 I/O6
26 I/O5
25 I/O4
24 GND
23 I/O3
22 I/O2
21 I/O1
20 A0
19 A1
18 A2
17 A3
17 A3
18 A2
19 A1
20 A0
21 I/O1
22 I/O2
23 I/O3
24 GND
25 I/O4
26 I/O5
27 I/O6
28 I/O7
29 I/O8
30 CE1
31 A10
32 OE
A17 1
A16 2
A14 3
A12 4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O1 13
I/O2 14
I/O3 15
GND 16
32 Vcc
31 A15
30 CE2
29 WE
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE1
21 I/O8
20 I/O7
19 I/O6
18 I/O5
17 I/O4
CXK582000M
Symbol
A0 to A17
I/O1 to I/O8
CE1, CE2
WE
OE
VCC
GND
Description
Address input
Data input output
Chip enable 1, 2 input
Write enable input
Output enable input
Power supply
Ground
Absolute Maximum Ratings
(Ta = 25°C, GND = 0V)
Item
Supply voltage
Input voltage
Input and output voltage
Allowable power dissipation
Operating temperature
Symbol
Rating
VCC –0.5 to +7.0
VIN –0.5∗ to VCC + 0.5
VI/O –0.5∗ to VCC + 0.5
PD 0.7
Topr
0 to +70
Unit
V
V
V
W
°C
Storage temperature
Tstg
–55 to +150
°C
Soldering temperature · time Tsolder
235 · 10
∗ VIN, VI/O = –3.0V Min. for pulse width less than 50ns.
°C · s
Truth Table
CE1 CE2 OE WE
Mode
H × × × Not selected
× L × × Not selected
L H H H Output disable
L H L H Read
L H × L Write
×: “H” or “L”
I/O pin
High Z
High Z
High Z
Data out
Data in
VCC Current
ISB1, ISB2
ISB1, ISB2
ICC1, ICC2, ICC3
ICC1, ICC2, ICC3
ICC1, ICC2, ICC3
–2–
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( sony )
CXK582000YM cmos
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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262144-word X 8-bit High Speed CMOS Static RAM - Sony Corporation
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