CXK581000AYM-10SL 반도체 회로 부품 판매점
131072-word x 8-bit High Speed CMOS Static RAM
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 Sony Corporation |
CXK581000ATM/AYM/AM/AP
-55LL/70LL/10LL
-55SL/70SL/10SL
131072-word × 8-bit High Speed CMOS Static RAM
For the availability of this product, please contact the sales office.
Description
The CXK581000ATM/AYM/AM/AP is a high speed
CMOS static RAM organized as 131072-words by
8 bits.
A polysilicon TFT cell technology realized extremely low
stand- by current and higher data retention stability.
Special feature are low power consumption, high
speed and broad package line-up.
The CXK581000ATM/AYM/AM/AP ia a suitable
RAM for portable equipment with battery back up.
CXK581000ATM
32 pin TSOP (Plastic)
CXK581000AYM
32 pin TSOP (Plastic)
CXK581000AM
32 pin SOP (Plastic)
CXK581000AP
32 pin DIP (Plastic)
Features
• Fast access time:
CXK581000ATM/AYM/AM/AP
(Access time)
-55LL/55SL
55ns (Max.)
-70LL/70SL
70ns (Max.)
-10LL/10SL
100ns (Max.)
• Low standby current:
CXK581000ATM/AYM/AM/AP
-55LL/70LL/10LL
20µA (Max.)
-55SL/70SL/10SL
12µA (Max.)
• Low data retention current
CXK581000ATM/AYM/AM/AP
-55LL/70LL/10LL
12µA (Max.)
-55SL/70SL/10SL
4µA (Max.)
• Single +5V supply: +5V ±10%
• Low voltage data retention: 2.0V (Min.)
• Broad package line-up
• CXK581000ATM/AYM
8mm × 20mm 32 pin TSOP package
• CXK581000AM 525mil 32 pin SOP package
• CXK581000AP 600mil 32 pin DIP package
Block Diagram
A10
A11
A9
A8 VCC
A13
A15
Buffer
Row
Decoder
Memory
Matrix
1024 × 1024
A16 GND
A14
A12
A7
A6
A5
A4
A3 Buffer
A2
A1
A0
I/O Gate
Column
Decoder
Functions
131072-word × 8-bit static RAM
Structure
Silicon gate CMOS IC
OE
Buffer
WE
CE1
CE2
I/O Buffer
I/O 1 I/O 8
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E92756D53-PP
CXK581000ATM/AYM/AM/AP
Pin Configuration (Top View)
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
CXK581000ATM
(Standard Pinout)
A4
A5
A6
A7
A12
A14
A16
NC
VCC
A15
CE2
WE
A13
A8
A9
A11
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
CXK581000AYM
(Mirror Image Pinout)
Pin Description
32 OE
31 A10
30 CE1
29 I/O8
28 I/O7
27 I/O6
26 I/O5
25 I/O4
24 GND
23 I/O3
22 I/O2
21 I/O1
20 A0
19 A1
18 A2
17 A3
17 A3
18 A2
19 A1
20 A0
21 I/O1
22 I/O2
23 I/O3
24 GND
25 I/O4
26 I/O5
27 I/O6
28 I/O7
29 I/O8
30 CE1
31 A10
32 OE
NC
A16
1
2
A14
A12
A7
3
4
5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O1
I/O2
I/O3
13
14
15
GND 16
32 VCC
31 A15
30 CE2
29 WE
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE1
21 I/O8
20 I/O7
19 I/O6
18 I/O5
17 I/O4
CXK581000AM
CXK581000AP
Symbol
Description
A0 to A16 Address input
I/O1 to I/O8 Data input output
CE1, CE2 Chip enable 1, 2 input
WE Write enable input
OE Output enable input
Vcc Power supply
GND
Ground
NC No connection
Absolute Maximum Ratings
Item Symbol
Supply voltage
VCC
Input voltage
VIN
Input and output voltage
VI/O
Allowable power dissipation PD
CXK581000AP
CXK581000ATM/AYM/AM
Operating temperature
Topr
Storage temperature
Tstg
Soldering temperature
CXK581000AP
Tsolder
CXK581000ATM/AYM/AM
∗ VIN,VI/O = –3.0V Min. for pulse width less than 50ns.
(Ta = 25°C, GND = 0V)
Rating
Unit
–0.5 to +7.0
–0.5∗ to VCC +0.5
–0.5∗ to VCC +0.5
V
1.0
W
0.7
0 to +70
–55 to +150
°C
260 • 10
235 • 10
°C • s
Truth Table
CE1 CE2
H×
×L
LH
LH
LH
×: "H" or "L"
OE
×
×
H
L
×
WE Mode
× Not selected
× Not selected
H Output disable
H Read
L Write
I/O pin
High Z
High Z
High Z
Data out
Data in
VCC Current
ISB1, ISB2
ISB1, ISB2
ICC1, ICC2, ICC3
ICC1, ICC2, ICC3
ICC1, ICC2, ICC3
DC Recommended Operating Conditions
(Ta = 0 to +70°C, GND = 0V)
Item Symbol Min.
Supply voltage
VCC 4.5
Input high voltage
VIH 2.2
Input low voltage
VIL –0.3∗
∗ VIL = –3.0V Min. for pulse width less than 50ns.
Typ.
5.0
—
—
Max.
5.5
VCC +0.3
0.8
Unit
V
–2–
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제조업체: Sony Corporation
( sony )
CXK581000AYM-10SL cmos
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