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Advanced Micro Devices |
Am29LV640D/Am29LV641D
Data Sheet
July 2003
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that orig-
inally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate,
and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order
these products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Publication Number 22366 Revision B Amendment +8 Issue Date September 20, 2002
Am29LV640D/Am29LV641D
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only
Uniform Sector Flash Memory with VersatileIO Control
DISTINCTIVE CHARACTERISTICS
s Single power supply operation
— 3.0 to 3.6 volt read, erase, and program operations
s VersatileIO control
— Device generates output voltages and tolerates data
input voltages on the DQ input/ouputs as determined
by the voltage on VIO
s High performance
— Access times as fast as 90 ns
s Manufactured on 0.23 µm process technology
s CFI (Common Flash Interface) compliant
— Provides device-specific information to the system,
allowing host software to easily reconfigure for
different Flash devices
s SecSi (Secured Silicon) Sector region
— 128-word sector for permanent, secure identification
through an 8-word random Electronic Serial Number
— May be programmed and locked at the factory or by
the customer
— Accessible through a command sequence
s Ultra low power consumption (typical values at 3.0 V,
5 MHz)
— 9 mA typical active read current
— 26 mA typical erase/program current
— 200 nA typical standby mode current
s Flexible sector architecture
— One hundred twenty-eight 32 Kword sectors
s Sector Protection
— A hardware method to lock a sector to prevent
program or erase operations within that sector
— Sectors can be locked in-system or via programming
equipment
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
s Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically writes
and verifies data at specified addresses
s Compatibility with JEDEC standards
— Pinout and software compatible with single-power
supply Flash
— Superior inadvertent write protection
s Minimum 1 million erase cycle guarantee per sector
s Package options
— 48-pin TSOP (Am29LV641DH/DL only)
— 56-pin SSOP (Am29LV640DH/DL only)
— 63-ball Fine-Pitch BGA (Am29LV640DU only)
— 64-ball Fortified BGA (Am29LV640DU only)
s Erase Suspend/Erase Resume
— Suspends an erase operation to read data from, or
program data to, a sect27
— or that is not being erased, then resumes the erase
operation
s Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion
s Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
s Ready/Busy# pin (RY/BY#) (Am29LV640DU in FBGA
package only)
— Provides a hardware method of detecting program or
erase cycle completion
s Hardware reset pin (RESET#)
— Hardware method to reset the device for reading array
data
s WP# pin (Am29LV641DH/DL in TSOP,
Am29LV640DH/DL in SSOP only)
— At VIL, protects the first or last 32 Kword sector,
regardless of sector protect/unprotect status
— At VIH, allows removal of sector protection
— An internal pull up to VCC is provided
s ACC pin
— Accelerates programming time for higher throughput
during system production
s Program and Erase Performance (VHH not applied to
the ACC input pin)
— Word program time: 11 µs typical
— Sector erase time: 0.9 s typical for each 32 Kword
sector
Publication# 22366 Rev: B Amendment/+8
Issue Date: September 20, 2002
Refer to AMD’s Website (www.amd.com) for the latest information.
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