AT27C080-12RC 반도체 회로 부품 판매점
8-Megabit 1M x 8 UV Erasable CMOS EPROM
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 ATMEL Corporation |
AT27C080
Features
• Fast Read Access Time - 90 ns
• Low Power CMOS Operation
- 100 µA max. Standby
- 40 mA max. Active at 5 MHz
• JEDEC Standard Packages
- 32 Lead PLCC
- 32-Lead 600-mil PDIP and Cerdip
- 32-Lead 450-mil SOIC (SOP)
- 32-Lead TSOP
• 5V ± 10% Supply
• High-Reliability CMOS Technology
- 2,000V ESD Protection
- 200 mA Latchup Immunity
• Rapid™ Programming Algorithm - 50 µs/byte (typical)
• CMOS and TTL Compatible Inputs and Outputs
• Integrated Product Identification Code
• Industrial and Commercial Temperature Ranges
Description
The AT27C080 chip is a low-power, high-performance 8,388,608-bit ultraviolet eras-
able programmable read only memory (EPROM) organized as 1M by 8 bits. The
AT27C080 requires only one 5V power supply in normal read mode operation. Any
byte can be accessed in less than 90 ns, eliminating the need for speed reducing
WAIT states on high-performance microprocessor systems.
Atmel’s scaled CMOS technology provides low active power consumption and fast
programming. Power consumption is typically 10 mA in active mode and less than 10
µA in standby mode.
(continued)
Pin Configurations
Pin Name
Function
A0 - A19
Addresses
O0 - O7
Outputs
CE Chip Enable
OE Output Enable
TSOP Top View
Type 1
CDIP, PDIP, SOIC Top View
A19
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
O0
O1
O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 VCC
31 A18
30 A17
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE/VPP
23 A10
22 CE
21 07
20 06
19 05
18 04
17 03
A11
A9
A8
A13
A14
A17
A18
VCC
A19
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 OE/VPP
31 A10
30 CE
29 07
28 06
27 05
26 04
25 03
24 GND
23 02
22 01
21 O0
20 A0
19 A1
18 A2
17 A3
PLCC Top View
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
O0 13
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE/VPP
23 A10
22 CE
21 07
8-Megabit
(1M x 8)
UV Erasable
CMOS EPROM
AT27C080
0360F-B–7/97
1
The AT27C080 is available in a choice of packages, includ-
ing; one-time programmable (OTP) plastic PLCC, PDIP,
SOIC (SOP), and TSOP, as well as windowed ceramic
Cerdip. All devices feature two-line control (CE, OE) to give
designers the flexibility to prevent bus contention.
With high density 1M byte storage capability, the
AT27C080 allows firmware to be stored reliably and to be
accessed by the system without the delays of mass storage
media.
Atmel’s 27C080 has additional features to ensure high
quality and efficient production use. The Rapid™ Program-
ming Algorithm reduces the time required to program the
part and guarantees reliable programming. Programming
time is typically only 50 µs/byte. The Integrated Product
Identification Code electronically identifies the device and
manufacturer. This feature is used by industry standard
programming equipment to select the proper programming
algorithms and voltages.
System Considerations
Switching between active and standby conditions via the
Chip Enable pin may produce transient voltage excursions.
Unless accommodated by the system design, these tran-
sients may exceed data sheet limits, resulting in device
non-conformance. At a minimum, a 0.1 µF high frequency,
low inherent inductance, ceramic capacitor should be uti-
lized for each device. This capacitor should be connected
between the VCC and Ground terminals of the device, as
close to the device as possible. Additionally, to stabilize the
supply voltage level on printed circuit boards with large
EPROM arrays, a 4.7 µF bulk electrolytic capacitor should
be utilized, again connected between the VCC and Ground
terminals. This capacitor should be positioned as close as
possible to the point where the power supply is connected
to the array.
Erasure Characteristics
The entire memory array of the AT27C080 is erased (all
outputs read as VOH) after exposure to ultraviolet light at a
wavelength of 2,537Å. Complete erasure is assured after a
minimum of 20 minutes of exposure using 12,000 µW/cm2
intensity lamps spaced one inch away from the chip. Mini-
mum erase time for lamps at other intensity ratings can be
calculated from the minimum integrated erasure dose of 15
W.sec/cm2. To prevent unintentional erasure, an opaque
label is recommended to cover the clear window on any UV
erasable EPROM that will be subjected to continuous
flourescent indoor lighting or sunlight.
2 AT27C080
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( atmel )
AT27C080-12RC cmos
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관련 데이터시트
AT27C080-12RC
8-Megabit 1M x 8 UV Erasable CMOS EPROM - ATMEL Corporation
AT27C080-12RI
8-Megabit 1M x 8 UV Erasable CMOS EPROM - ATMEL Corporation