AM28F256-200PEB 반도체 회로 부품 판매점
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory
|
|
 Advanced Micro Devices |
FINAL
Am28F256
256 Kilobit (32 K x 8-Bit)
CMOS 12.0 Volt, Bulk Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s High performance
— 70 ns maximum access time
s CMOS Low power consumption
— 30 mA maximum active current
— 100 µA maximum standby current
— No data retention power consumption
s Compatible with JEDEC-standard byte-wide
32-Pin EPROM pinouts
— 32-pin PDIP
— 32-pin PLCC
— 32-pin TSOP
s 10,000 write/erase cycles minimum
s Write and erase voltage 12.0 V ±5%
s Latch-up protected to 100 mA
from –1 V to VCC +1 V
s Flasherase Electrical Bulk Chip-Erase
— One second typical chip-erase
s Flashrite Programming
— 10 µs typical byte-program
— 0.5 second typical chip program
s Command register architecture for
microprocessor/microcontroller compatible
write interface
s On-chip address and data latches
s Advanced CMOS flash memory technology
— Low cost single transistor memory cell
s Automatic write/erase pulse stop timer
GENERAL DESCRIPTION
The Am28F256 is a 256 K Flash memory organized as
32 Kbytes of 8 bits each. AMD’s Flash memories offer
the most cost-effective and reliable read/write non-
volatile random access memory. The Am28F256 is
packaged in 32-pin PDIP, PLCC, and TSOP versions. It
is designed to be reprogrammed and erased in-system
or in standard EPROM programmers. The Am28F256
is erased when shipped from the factory.
The standard Am28F256 offers access times as fast as
70 ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the Am28F256 has separate chip enable (CE#) and
output enable (OE#) controls.
AMD’s Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
Am28F256 uses a command register to manage this
functionality, while maintaining a standard JEDEC
Flash Standard 32-pin pinout. The command register
allows for 100% TTL level control inputs and fixed
power supply levels during erase and programming.
AMD’s Flash technology reliably stores memory
contents even after 10,000 erase and program cycles.
The AMD cell is designed to optimize the erase and
programming mechanisms. In addition, the combina-
tion of advanced tunnel oxide processing and low
internal electric fields for erase and programming
operations produces reliable cycling. The Am28F256
uses a 12.0V ± 5% VPP high voltage input to perform
the Flasherase and Flashrite algorithms.
The highest degree of latch-up protection is achieved
with AMD’s proprietar y non-epi process. Latch-up
protection is provided for stresses up to 100 milliamps
on address and data pins from –1 V to VCC +1 V.
The Am28F256 is byte programmable using 10 µs
programming pulses in accordance with AMD’s
Flashrite programming algorithm. The typical room
temperature programming time of the Am28F256 is a
half a second. The entire chip is bulk erased using
10 ms erase pulses according to AMD’s Flasherase
alrogithm. Typical erasure at room temperature is
accomplished in less than one second. The windowed
package and the 15-20 minutes required for EPROM
erasure using ultra-violet light are eliminated.
Publication# 11560 Rev: G Amendment/+2
Issue Date: January 1998
Commands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as inputs to an internal state-machine which
controls the erase and programming circuitry. During
write cycles, the command register internally latches ad-
dress and data needed for the programming and erase
operations. For system design simplification, the
Am28F256 is designed to support either WE# or CE#
controlled writes. During a system write cycle, ad-
dresses are latched on the falling edge of WE# or CE#
whichever occurs last. Data is latched on the rising edge
of WE# or CE# whichever occurs first. To simplify the fol-
lowing discussion, the WE# pin is used as the write cycle
control pin throughout the rest of this text. All setup and
hold times are with respect to the WE# signal.
AMD’s Flash technology combines years of EPROM
and EEPROM experience to produce the highest levels
of quality, reliability, and cost effectiveness. The
Am28F256 electrically erases all bits simultaneously
using Fowler-Nordheim tunneling. The bytes are
programmed one byte at a time using the EPROM
programming mechanism of hot electron injection.
BLOCK DIAGRAM
DQ0–DQ7
VCC
VSS
VPP
WE#
State
Control
Erase
Voltage
Switch
To Array
Input/Output
Buffers
CE#
OE#
Command
Register
Program
Voltage
Switch
Chip Enable
Output Enable
Logic
Data
Latch
Low VCC
Detector
A0–A14
Program/Erase
Pulse Timer
Y-Decoder
Address
Latch
X-Decoder
Y-Gating
262,144
Bit
Cell Matrix
PRODUCT SELECTOR GUIDE
Family Part Number
Speed Options (VCC = 5.0 V ± 10%)
Max Access Time (ns)
CE# (E#) Access (ns)
OE# (G#) Access (ns)
11560F-1
Am28F256
-70
-90
-120
-150
-200
70 90 120 150 200
70 90 120 150 200
35 35 50 55 55
2 Am28F256
|
PDF 파일 내의 페이지 : 총 35 페이지
제조업체: Advanced Micro Devices
( amd )
AM28F256-200PEB cmos
데이터시트 다운로드 :
[ AM28F256-200PEB.PDF ]
[ AM28F256-200PEB 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
AM28F256-200PE
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory - Advanced Micro Devices
AM28F256-200PEB
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory - Advanced Micro Devices