A29DL323UG-90 반도체 회로 부품 판매점
32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
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 AMIC Technology |
A29DL323 Series
32M-Bit CMOS Low Voltage Dual Operation Flash Memory
Preliminary 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
Features
n Two bank organization enabling simultaneous execution of
erase / program and read
n Bank organization: 2 banks (8 Mbits + 24 Mbits)
n Memory organization:
- 4,194,304 words x 8 bits (BYTE mode)
- 2,097,152 words x 16 bits (WORD mode)
n Sector organization:
71 sectors (8 Kbytes / 4 Kwords × 8 sectors, 64 Kbytes /
32 Kwords × 63 sectors)
n 2 types of sector organization
- T type: Boot sector allocated to the highest address
(sector)
- B type: Boot sector allocated to the lowest address
(sector)
n 3-state output
n Automatic program
- Program suspend / resume
n Unlock bypass program
n Automatic erase
- Chip erase
- Sector erase (sectors can be combined freely)
n Erase suspend / resume
n Program / Erase completion detection
- Detection through data polling and toggle bits
- Detection through RY/ BY pin
n Sector group protection
- Any sector group can be protected
- Any protected sector group can be temporary
unprotected
n Sectors can be used for boot application
n Hardware reset and standby using RESET pin
n Automatic sleep mode
n Boot block sector protect by WP (ACC) pin
n Conforms to common flash memory interface (CFI)
n Extra One Time Protect Sector provided
Part No.
A29DL323
Access
time
(Max.)
90ns
Operating
supply
voltage
2.7V~
3.6V
Power supply current
(Active mode)
(Max.)
16mA 30mA
Standby
current
(Max.)
5A
n Operating ambient temperature: -40 to 85°C
n Program / erase time
- Program: 9.0 µs / byte (TYP.)
11.0 µs / word (TYP.)
- Sector erase: 0.7 s (TYP.)
n Number of program / erase: 1,000,000 times (MIN.)
n Package options
- 48-pin TSOP (I) or 63-ball TFBGA
General Description
The A29DL323 is a flash memory organized of 33,554,432
bits and 71 sectors. Sectors of this memory can be erased
at a low voltage (2.7 to 3.6 V) supplied from a single power
source, or the contents of the entire chip can be erased.
Two modes of memory organization, BYTE mode
(4,194,304 words × 8 bits) and WORD mode (2,097,152
words × 16 bits), are selectable so that the memory can be
programmed in byte or word units.
The A29DL323 can be read while its contents are being
erased or programmed. The memory cell is divided into two
banks. While sectors in one bank are being erased or
programmed, data can be read from the other bank thanks
to the simultaneous execution architecture. The banks are
8 Mbits and 24 Mbits.
This flash memory comes in two types. The T type has a
boot sector located at the highest address (sector) and the
B type has a boot sector at the lowest address (sector).
Because the A29DL323 enables the boot sector to be
erased, it is ideal for storing a boot program. In addition,
program code that controls the flash memory can be also
stored, and the program code can be programmed or
erased without the need to load it into RAM. Eight small
sectors for storing parameters are provided, each of which
can be erased in 8 Kbytes units.
Once a program or erase command sequence has been
executed, an automatic program or automatic erase
function internally executes program or erase and
verification automatically.
Because the A29DL323 can be electrically erased or
programmed by writing an instruction, data can be
reprogrammed on-board after the flash memory has been
installed in a system, making it suitable for a wide range of
applications.
PRELIMINARY (May, 2002, Version 0.0)
1
AMIC Technology, Inc.
Pin Configurations
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE
RESET
NC
WP (ACC)
RY/BY
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
n TSOP (I)
A29DL323V
A29DL323 Series
48 A16
47 BYTE
46 GND
45 I/O 15 (A-1)
44 I/O 7
43 I/O 14
42 I/O 6
41 I/O 13
40 I/O 5
39 I/O 12
38 I/O 4
37 VCC
36 I/O 11
35 I/O 3
34 I/O 10
33 I/O 2
32 I/O 9
31 I/O 1
30 I/O 8
29 I/O 0
28 OE
27 GND
26 CE
25 A0
Top View
n TFBGA
Bottom View
ABCDEFGH J K LM
8
7
6
5
4
3
2
1
ML K J HGF EDCBA
Top View
A B C D E F GH J KL M
1 NC NC
NC NC
2 NC NC A13
A12
A14 A15 A16 BYTE I/O15(A-1) GND NC
NC
3 A9 A8 A10 A11 I/O7 I/O14 I/O13 I/O6
4 WE RESET NC A19 I/O5 I/O12 VCC I/O4
5 RY/ BY WP (ACC) A18 A20 I/O2 I/O10 I/O11 I/O3
6 A7 A17 A6 A5 I/O0 I/O8 I/O9 I/O1
7 NC
A3 A4 A2 A1 A0 CE OE GND NC NC
8 NC NC
NC NC
PRELIMINARY (May, 2002, Version 0.0)
2
AMIC Technology, Inc.
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A29DL323UG-90 cmos
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A29DL323UG-90
32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode) - AMIC Technology
