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240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb C version



Hynix Semiconductor 로고
Hynix Semiconductor
HYMP164U64CR6-Y5 데이터시트, 핀배열, 회로
240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb C version
This Hynix unbuffered Dual In-Line Memory Module(DIMM) series consists of 1Gb version C DDR2
SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb ver-
sion C based DDR2 Unbuffered DIMM series provide a high performance 8 byte interface in 133.35mm
width form factor of industry standard. It is suitable for easy interchange and addition.
FEATURES
• JEDEC standard Double Data Rate2 Syn-
• Programmable Burst Length 4 / 8 with both
chrnous DRAMs (DDR2 SDRAMs) with 1.8V +/
sequential and interleave mode
- 0.1V Power Supply
• Auto refresh and self refresh supported
• All inputs and outputs are compatible with
SSTL_1.8 interface
• 8 Bank architecture
• Posted CAS
• 8192 refresh cycles / 64ms
• Serial presence detect with EEPROM
• DDR2 SDRAM Package: 60ball
FBGA(128Mx8), 84ball FBGA(64Mx16)
• Programmable CAS Latency 3 ,4 ,5, 6
• 133.35 x 30.00 mm form factor
• OCD (Off-Chip Driver Impedance Adjustment) • RoHS compliant
• ODT (On-Die Termination)
• Fully differential clock operations (CK & CK)
ORDERING INFORMATION
Part Name
HYMP164U64CP6-C4/Y5/S6/S5
HYMP164U64CR6-C4/Y5/S6/S5
HYMP112U64CP8-C4/Y5/S6/S5
HYMP112U64CR8-C4/Y5/S6/S5
HYMP112U72CP8-C4/Y5/S6/S5
HYMP125U64CP8-C4/Y5/S6/S5
HYMP125U64CR8-C4/Y5/S6/S5
HYMP125U72CP8-C4/Y5/S6/S5
Density
512MB
512MB
1GB
1GB
1GB
2GB
2GB
2GB
Org.
64Mx64
64Mx64
128Mx64
128Mx64
128Mx72
256Mx64
256Mx64
256Mx72
# of
DRAMs
4
4
8
8
9
16
16
18
# of
ranks
1
1
1
1
1
2
2
2
Materials
Lead-free
Halogen-free
Lead-free
Halogen-free
Lead-free
Lead-free
Halogen-free
Lead-free
ECC
None
None
None
None
ECC
None
None
ECC
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.6 / Jul. 2008
1


HYMP164U64CR6-Y5 데이터시트, 핀배열, 회로
1240pin DDR2 SDRAM Unbuffered DIMMs
SPEED GRADE & KEY PARAMETERS
Speed@CL3
Speed@CL4
Speed@CL5
Speed@CL6
CL-tRCD-tRP
C4
(DDR2-533)
400
533
-
-
4-4-4
Y5
(DDR2-667)
400
533
667
-
5-5-5
S6
(DDR2-800)
-
533
667
800
6-6-6
S5
(DDR2-800)
400
533
800
-
5-5-5
Unit
Mbps
Mbps
Mbps
Mbps
tCK
ADDRESS TABLE
Density Organization Ranks
512MB
1GB
1GB
2GB
2GB
64M x 64
128M x 64
128M x 72
256M x 64
256M x 72
1
1
1
2
2
SDRAMs
64Mb x 16
128Mb x 8
128Mb x 8
128Mb x 8
128Mb x 8
# of
DRAMs
4
8
9
16
18
# of row/bank/column Address
13(A0~A12)/3(BA0~BA2)/10(A0~A9)
14(A0~A13)/3(BA0~BA2)/10(A0~A9)
14(A0~A13)/3(BA0~BA2)/10(A0~A9)
14(A0~A13)/3(BA0~BA2)/10(A0~A9)
14(A0~A13)/3(BA0~BA2)/10(A0~A9)
Refresh
Method
8K / 64ms
8K / 64ms
8K / 64ms
8K / 64ms
8K / 64ms
Rev. 0.6 / Jul. 2008
2




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240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb C version - Hynix Semiconductor