HYS64V16300GU-7-C2 반도체 회로 부품 판매점

3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules

Infineon

HYS 64/72V16300/32220GU SDRAM-Modules 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory applications • PC100-222, PC133-333 and PC133-222 versions • 1 bank 16M × 64, 16M × 72 and 2 bank 32M × 64, 32M × 72 organzation • Optimized for byte-write non-parity (x64) or ECC (x72) applications • JEDEC standard Synchronous DRAMs (SDRAM) • Fully PC board layout compatible to INTEL’s Rev. 1.0 Module Specification • SDRAM Performance: -7 /-7.5 PC133 fCK Max. Clock Frequency 133 tAC Clock Access 5.4 Time -8 Unit PC100 100 MHz 6 ns • Programmed Latencies: Product Speed -7 PC133-222 -7.5 PC133-333 -8 PC100-222 CL tRCD 22 33 22 tRP 2 3 2 • Single +3.3 V(±0.3 V) Power Supply • Programmable CAS Latency, Burst Length, and Wrap Sequence (Sequential and Interleave) • Auto-Refresh (CBR) and Self-Refresh • Decoupling capacitors mounted on substrate • All inputs and outputs are LVTTL compatible • Serial Presence Detect with E2PROM • Utilizes 16M × 8 SDRAMs in TSOPII-54 packages with 4096 refresh cycles every 64 ms • 133.35 mm × 31.75 mm × 4,00 mm card size with gold-contact pads (JEDEC MO-161-BA) Description The HYS 64(72)V16300GU and HYS 64(72)V32220GU are industry-standard 168-pin 8-byte Dual In-line Memory Modules (DIMMs) which are organized as 16M × 64, 16M × 72 in 1 bank and 32M × 64 and 32M × 72 in two banks of high-speed memory arrays designed with 128Mbit Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use -7 speed sorted 16M × 8 SDRAM devices in TSOP54 packages to meet the PC133-222 requirements, -7.5 speed sorted for PC133-333 and use -8 components for the standard PC100-222 applications. Decoupling capacitors are mounted on the PC board. The PC board design is in accordance with INTEL’s Module Specification. The DIMMs have Serial Presence Detect, implemented with a serial E2PROM using the two-pin I2C protocol. The first 128 bytes are utilized by the DIMM manufacturer and the second 128 bytes are available to the end user. All INFINEON 168-pin DIMMs provide a high performance, flexible 8-byte interface in a 133.35 mm long footprint, with 1.25“ (31.75 mm) height. INFINEON Technologies 1 9.01 HYS 64/72V16300/32220GU SDRAM-Modules Ordering Information Type Code Package Descriptions 128 MByte DIMMs HYS 64V16300GU-7-C2 PC133-222-520 L-DIM-168-33 133 Mhz 16M × 64 1 bank SDRAM module HYS 64V16300GU-7.5-C2 PC133-333-520 L-DIM-168-33 133 Mhz 16M × 64 1 bank SDRAM module HYS 64V16300GU-8-C2 PC100-222-620 L-DIM-168-33 100 MHz 16M × 64 1 bank SDRAM module HYS 72V16300GU-7-C2 PC133-222-520 L-DIM-168-33 133 Mhz 16M × 72 1 bank SDRAM module HYS 72V16300GU-7.5-C2 PC133-333-520 L-DIM-168-33 133 Mhz 16M × 72 1 bank SDRAM module HYS 72V16300GU-8-C2 PC100-222-620 L-DIM-168-33 100 MHz 16M × 72 1 bank SDRAM module 256 MByte DIMMs HYS 64V32220GU-7-C2 PC133-222-520 L-DIM-168-30 133 MHz 32M × 64 2 bank SDRAM module HYS 64V32220GU-7.5-C2 PC133-333-520 L-DIM-168-30 133 MHz 32M × 64 2 bank SDRAM module HYS 64V32220GU-8-C2 PC100-222-620 L-DIM-168-30 100 MHz 32M × 64 2 bank SDRAM module HYS 72V32220GU-7-C2 PC133-222-520 L-DIM-168-30 133 Mhz 32M × 72 2 bank SDRAM module HYS 72V32220GU-7.5-C2 PC133-333-520 L-DIM-168-30 133 Mhz 32M × 72 2 bank SDRAM module HYS 72V32220GU-8-C2 PC100-222-620 L-DIM-168-30 100 Mhz 32M × 72 2 bank SDRAM module Module Height 1.25“ 1.25“ 1.25“ 1.25“ 1.25“ 1.25“ 1.25“ 1.25“ 1.25“ 1.25“ 1.25“ 1.25“ Note: All part numbers end with a place code, designating the die revision. Consult factory for current revision. Example: HYS 64V16300GU-8-C2, indicates that Rev.C2 dies are used for SDRAM components. INFINEON Technologies 2 9.01

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HYS64V16300GU-7-C2

3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules - Infineon

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