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IDT54FCT3827BPB 반도체 회로 부품 판매점

3.3V CMOS 10-BIT BUFFERS



Integrated Device Technology 로고
Integrated Device Technology
IDT54FCT3827BPB 데이터시트, 핀배열, 회로
3.3V CMOS 10-BIT
BUFFERS
IDT54/74FCT3827A/B
Integrated Device Technology, Inc.
FEATURES:
• 0.5 MICRON CMOS Technology
• ESD > 2000V per MIL-STD-883, Method 3015;
> 200V using machine model (C = 200pF, R = 0)
• 25 mil Center SSOP Packages
• Extended commercial range of -40°C to +85°C
• VCC = 3.3V ±0.3V, Normal Range or
VCC = 2.7V to 3.6V, Extended Range
• CMOS power levels (0.4µW typ. static)
• Rail-to-Rail output swing for increased noise margin
• Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The FCT3827A/B 10-bit bus drivers are built using an
advanced dual metal CMOS technology. These high speed,
low power buffers are ideal for high-performance bus interface
buffering for wide data/address paths or buses carrying parity.
The 10-bit buffers have NAND-ed output enables for maxi-
mum control flexibility.
All of the FCT3827 high performance interface compo-
nents are designed for high-capacitance load drive capability,
while providing low-capacitance bus loading at both inputs
and outputs.
FUNCTIONAL BLOCK DIAGRAM
Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9
D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 OE1 OE2
3092 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
©1995 Integrated Device Technology, Inc.
8.15
AUGUST 1995
DSC-4651/-
1


IDT54FCT3827BPB 데이터시트, 핀배열, 회로
IDT54/74FCT3827A/B
3.3V CMOS OCTAL BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
OE1
D0
D1
D2
D3
D4
D5
D6
D7
D8
D9
GND
1 24
2 23
3 22
4 P24-1 21
5 D24-1 20
6 SO24-2 19
7 SO24-7 18
8 & 17
9 SO24-8 16
10 15
11 14
12 13
VCC
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
OE2
DIP/SOIC/SSOP/QSOP
TOP VIEW
3092 drw 02
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Rating
VTERM(2) Terminal Voltage
with Respect to
GND
VTERM(3) Terminal Voltage
with Respect to
GND
VTERM(4) Terminal Voltage
with Respect to
GND
TA Operating
Temperature
TBIAS Temperature
Under Bias
TSTG Storage
Temperature
PT Power Dissipation
Commercial
–0.5 to +4.6
–0.5 to +7.0
–0.5 to
VCC + 0.5
–40 to +85
–55 to +125
–55 to +125
1.0
Military
–0.5 to +4.6
–0.5 to +7.0
–0.5 to
VCC + 0.5
–55 to +125
–65 to +135
–65 to +150
1.0
Unit
V
V
V
°C
°C
°C
W
IOUT
DC Output
–60 to +60 –60 to +60 mA
Current
NOTES:
3092 lnk 03
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for ex-
tended periods may affect reliability.
2. Vcc terminals.
3. Input terminals.
4. Output and I/O terminals.
PIN DESCRIPTION
Names
OEI
DI
I/O Description
I When both are LOW the outputs are
enabled. When either one or both are
HIGH the outputs are High Z.
I 10-bit data input.
YI O 10-bit data output.
3092 tbl 01
FUNCTION TABLE(1)
Inputs
Output
OE1 OE2
DI
YI
LLL
L LH
HXX
XHX
NOTE:
1. H = HIGH Voltage Level
X = Don’t Care
L = LOW Voltage Level
Z = High Impedance
L
H
Z
Z
Function
Transparent
Three-State
3092 tbl 02
CAPACITANCE (TA = +25°C, f = 1.0MHz)
Symbol Parameter(1)
CIN Input
Capacitance
Conditions Typ. Max. Unit
VIN = 0V
3.5 6.0 pF
COUT Output
VOUT = 0V 4.0 8.0 pF
Capacitance
NOTE:
3092 lnk 04
1. This parameter is measured at characterization but not tested.
8.15 2




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