LV51144T 반도체 회로 부품 판매점
1-Cell Lithium-Ion Battery Protection IC
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 Sanyo Semicon Device |
www.DataSheet.co.kr
Ordering number : ENA1642
LV51144T
CMOS IC
1-Cell Lithium-Ion Battery
Protection IC
Overview
The LV51144T is protection IC for rechargeable Li-ion battery by high withstand voltage CMOS process.
The LV51144T protect single-cell Li-ion battery from over-charge, over-discharge, charge over-current and discharge
over-current.
Features
• High accuracy detection voltage
Over-charge detection(no hysteresis)
±25mV
Over-discharge detection(no hysteresis)
±25%
Charge over-current detection
±30mV
Discharge over-current detection
±20mV
• Delay time (internal adjustment)
• Low current consumption
Operation
Typ. 3.0μA
Over-discharge condition
Max. 0.1μA
• 0V cell battery charging function
• The over-discharge detection is released only when the charger is connected.
Specifications
Absolute Maximum Ratings
Parameter
Supply voltage
Input voltage of VM
Output voltage of CO
Output voltage of DO
Power dissipation
Operating temperature
Storage temperature
Symbol
VDD
VM
VCO
VDO
PD
Topr
Tstg
Conditions
Ratings
VSS-0.3 to VSS+7
VDD-28 to VDD+0.3
VM-0.3 to VDD+0.3
VSS-0.3 to VDD+0.3
350
-40 to +85
-55 to +125
Unit
V
V
V
V
mW
°C
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
D2409 SY 20091221-S00005 No.A1642-1/13
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
LV51144T
Electrical Characteristics at Topr = 25°C, unless otherwise specified
Parameter
Symbol
Conditions
Test
Ratings
circuit
min
typ
Detection voltage
Over-charge detection voltage
VC
1
3.625
3.650
Over-discharge detection voltage (*2)
Vdc
1
2.438
2.500
Charge over-current detection voltage
VIc
2
-0.230
-0.200
Discharge over-current detection voltage
VIdc
2
0.180
0.200
Load short-circuiting detection voltage
Input voltage
Vshort Based on VDD, VDD = 3.5V
2
-1.7 -1.3
Input voltage between VDD and VSS
0V battery charge starting charger voltage
VDD
Vcha
Internal circuit operating voltage
Acceptable
-
3
1.8
0.9
Current consumption
Current consumption on operation
Current consumption on shutdown
Output resistance
Iopr VDD = 3.5V, VM = 0V
Isdn VDD = VM = 1.8V
4
4
3.0
CO : Pch ON resistance
CO : Nch ON resistance
DO : Pch ON resistance
DO : Nch ON resistance
Discharge over-current release resistance
Detection delay time
Rcop
Rcon
Rdop
Rdon
Rdwn
CO = 3.0V, VDD = 3.5V,
VM = 0V
CO = 0.5V, VDD = 4.6V,
VM = 0V
DO = 3.0V, VDD = 3.5V,
VM = 0V
DO = 0.5V, VDD = VM = 1.8V
VDD = 3.5V, VM = 1.0V
5
5
5
5
5
1.5 3.0
0.5 1.0
1.7 3.5
1.7
15.0
3.5
30.0
Over-charge detection delay time
Over-discharge detection delay time
Charge over-current detection delay time
Discharge over-current detection delay time
Load short-circuiting detection delay time
Release delay time
tc
tdc
tic
tidc
tshort
VDD = VC-0.2V→VC+0.2V,
VM = 0V
VDD = Vdc+0.2V→Vdc-0.2V,
VM = 0V
VDD = 3.0V, VM = 0V→-1.0V
VDD = 3.0V, VM = 0V→1.0V
VDD = 3.0V, VM = 0V→3.0V
6
6
6
6
6
0.70
21.7
1.0
31.0
5.6 8.0
5.6 8.0
190 370
Release delay time 1
Over-discharge release
Charge over-current release (*1)
Discharge over-current release
Load short-circuiting release
Release delay time 2
Over-charge release
trel1
6 1.0 2.0
trel2 VDD = VC+0.2V→VC-0.2V,
VM = 1.0V
6
8.0 16.0
Note :*1 When the charger is connected under over-discharge , this means the time after the over-discharge detection is released.
*2 The over-discharge detection is released at this voltage only when the charger is connected.
The over-discharge detection isn't released if the charger isn't connected.
Unit
max
3.675
2.563
-0.170
0.220
-1.0
V
V
V
V
V
7.0 V
1.4 V
6.0 μA
0.1 μA
4.5 kΩ
1.5 kΩ
5.0 kΩ
5.0
60.0
kΩ
kΩ
1.30
s
40.3 ms
10.4
10.4
550
ms
ms
μs
3.0 ms
24.0 ms
No.A1642-2/13
Datasheet pdf - http://www.DataSheet4U.net/
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제조업체: Sanyo Semicon Device
( sanyo )
LV51144T battery
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