TGA2624 반도체 회로 부품 판매점
GaN Power Amplifier
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 TriQuint Semiconductor |
Applications
Weather and Marine Radar.
TGA2624
9 – 10GHz 18W GaN Power Amplifier
Product Features
Frequency Range: 9 – 10GHz
PSAT: 42.5dBm @ PIN = 15dBm
P1dB: >38dBm
PAE: >40% @ PIN = 15dBm
Large Signal Gain: 27.5dB
Small Signal Gain: >35dB
Return Loss: >11dB
Bias: VD = 28V, IDQ = 365mA, VG = -2.7V Typical
Pulsed VD: PW = 100us and DC = 10%
Chip Dimensions: 5.0 x 2.62 x 0.10 mm
Functional Block Diagram
2 3 45
16
10 9 8 7
General Description
TriQuint’s TGA2624 is an x-band, high power MMIC
amplifier fabricated on TriQuint’s production 0.25um GaN
on SiC process. The TGA2624 operates from 9 – 10GHz
and provides a superior combination of power, gain and
efficiency. Achieving 18W of saturated output power with
27.5dB of large signal gain and greater than 40% power-
added efficiency, the TGA2624 provides the level of
performance demanded by today’s system architectures.
Depending on the system requirements, the TGA2624
can support cost saving initiatives on existing systems
while supporting next generation systems with increased
performance.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1
2, 10
4, 8
3, 9
5, 7
6
Symbol
RF In
VG1-2
VG3
VD1-2
VD3
RF Out
Ordering Information
Part
TGA2624
ECCN Description
3A001.b.2.b
9 – 10GHz 18W GaN
Power Amplifier
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
- 1 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2624
9 – 10GHz 18W GaN Power Amplifier
Absolute Maximum Ratings
Parameter
Value
Drain Voltage (VD)
40V
Gate Voltage Range (VG)
Drain Current (ID1-2)
Drain Current (ID3)
Gate Current (IG1-2)
-5 to 0V
1.6A
2.1A
-2 to 10mA
Gate Current (IG3)
-6 to 14mA
Power Dissipation (PDISS), 85°C
Input Power (PIN), CW, 50Ω,
VD = 28V, 85°C
49W
25dBm
Input Power (PIN), CW, VSWR 6:1,
VD = 28V, 85°C
19dBm
Channel Temperature (TCH)
275°C
Mounting Temperature (30 seconds)
320°C
Storage Temperature
-55 to 150°C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device at
these conditions is not implied.
Recommended Operating Conditions
Parameter
Value
Drain Voltage (VD)
28V
Drain Current (IDQ)
365mA (Total)
Gate Voltage (VG)
-2.7V (Typ.)
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: 250C, VD = 28V, IDQ = 365mA, VG = -2.7V Typical, Pulsed VD: PW = 100us, DC = 10%
Parameter
Min
Typical
Max
Units
Operational Frequency Range
9
10 GHz
Small Signal Gain
>35 dB
Input Return Loss
>11 dB
Output Return Loss
>11 dB
Output Power (Pin = 15dBm)
>42.5
dBm
Power Added Efficiency (Pin = 15dBm)
>40
%
Power @ 1dB Compression (P1dB)
>38
dBm
Small Signal Gain Temperature Coefficient
-0.06
dB/°C
Recommended Operating Voltage:
20
28
32 V
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
- 2 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
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PDF 파일 내의 페이지 : 총 14 페이지
제조업체: TriQuint Semiconductor
( triquint )
TGA2624 amplifier
데이터시트 다운로드 :
[ TGA2624.PDF ]
[ TGA2624 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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