|
AVAGO |
ALM-80110
0.25W Analog Variable Gain Amplifier
Data Sheet
Description
Avago Technologies ALM-80110 is a 0.25W Analog Con-
trolledVariable Gain Amplifier which operates from 0.4GHz
to 1.6GHz. The device provides an exceptionally high OIP3
level of 40dBm, which is maintained over a wide attenu-
ation range. The device features wide gain control range,
low current, excellent input and output return loss.
The ALM-80110 is housed in a miniature 5.0X5.0X1.1 mm3,
10-lead multiple-chips-on-board (MCOB) module package.
This part is suitable for the AGC/Temperature compensa-
tion circuits application in wireless infrastructure such
as Cellular/PCS/W-CDMA/WLLand and new generation
wireless technologies systems.
Pin connections and Package Marking
Features
x Halogen free
x Wide Gain Control Range
x High OIP3 across attenuation range
Specifications
At 0.9GHz, Vdd = 5V, Itotal = 110mA (typ), Vbias = 4V, Vctrl = 5V @
25°C
x OIP3 = 40.5dBm
x Noise Figure = 4.8dB
x Gain = 13.5dB
x P1dB = 23.2dBm
x IRL = 17dB, ORL = 12dB
x Attenuation Range = 40dB
80110
WWYY
XXXX
Application
x WLL, WLAN and other applications in the 400MHz to
1.6GHz range.
x Transmitter and Receiver Gain Control
x Temperature Compensation Circuitry
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 100 V
ESD Human Body Model = 650 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
6 RFout
RFin 1
Note :
Top View : Package marking provides orienation and identification
“80110” = Device Code
“WWYY“ = Workweek and Year Code
“XXXX” = Assembly Lot number
Figure 1. Simplified Schematic diagram
ALM-80110 Absolute Maximum Rating (1)
TC = 25°C
Symbol
Id,max
Vd.,max
Vctrl_max
Vbias_max
Pd
Pin
Tj
Parameter
Drain Current
Drain Voltage,
RF output to ground
Control Voltage
Biasing Voltage
Power Dissipation
CW RF Input Power (4)
Junction Temperature
Units
mA
V
V
V
mW
dBm
°C
Absolute Maximum
140
5.5
7
15
770
26
150
Thermal Resistance (2,3)
(Vd = 5.0V) Tjc = 77.2°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage
2. Derate 12.95mW/°C for TL > 86°C
3. Thermal resistance measured using 150°C
Infra-Red Microscopy Technique.
4. Max rating for Pin is under Maximum
Attenuation mode i.e. Vctrl = 1V.
ALM-80110 Electrical Specification (1)
TC = 25°C, Zo = 50:, Vdd = 5.0V, Vbias = 4.0V, Vctrl = 5.0V unless noted
Symbol Parameter and Test Condition
Frequency Units Min. Typ. Max. stdev
Itotal Total Operating Current Range
NF Noise Figure at minimal Attenuation
N/A
0.45GHz
0.7GHz
0.9GHz
mA 89
dB
110 134 0.002
5.5
4.7
4.8 5.4 0.090
Gain Gain at minimal Attenuation
0.45GHz
17
0.7GHz
dB
15
0.9GHz
12 13.5 15 0.165
OIP3(2) Output Third Order Intercept Point
0.45GHz
0.7GHz
0.9GHz
dBm
36
40
40
40.5
0.717
P1dB
Output Power at 1dB Gain Compression
0.45GHz
0.7GHz
0.9GHz
dBm
22
23.5
23.3
23.2
0.068
IRL Input Return Loss
0.45GHz
12
0.7GHz
dB
20
NA
0.9GHz
17
ORL Output Return Loss
0.45GHz
0.7GHz
0.9GHz
dB
10
10.5 NA
12
ISO Isolation
0.45GHz
0.7GHz
0.9GHz
dB
30.5
30.5 NA
30.5
Vbias
Attenuator Bias Voltage
N/A V 2.7 4 5 NA
Vctrl Gain Variation Control Voltage
N/A V 1 – 5 NA
' Gain
Gain Variation Range (from Vctrl=1V to 5V)
0.45GHz
46
0.7GHz
dB
43
NA
0.9GHz
40
Note :
1. Measurements obtained from a test circuit described in Figure 53.
2. OIP3 test condition: F1 – F2 = 10MHz, with input power of -10dBm per tone measured at worst case side band.
3. Standard deviation data are based on at least 1000 pieces samples size taken from 2 wafer lots. Future wafers allocated to this product may have
nominal values anywhere between the upper and lower specification limits.
2
|