SZM-2166Z 반도체 회로 부품 판매점
2.3-2.7GHz 2W Power Amplifier
|
|
 Sirenza Microdevices |
Preliminary
Product Description
Sirenza Microdevices’ SZM-2166Z is a high linearity class AB
Heterojunction Bipolar Transistor (HBT) amplifier housed in a
low-cost surface-mountable plastic Q-FlexN multi-chip module
package. This HBT amplifier is made with InGaP on GaAs
device technology and fabricated with MOCVD for an ideal
combination of low cost and high reliability.
This product is specifically designed for 802.16 customer
premise equipment (CPE) terminals in the 2.3-2.7 GHz bands.
It can run from a 3V to 6V supply. The external output match
and bias adjustability allows load line optimization for other
applications or over narrower bands. It features an output
power detector, on/off power control and high RF overdrive
robustness. A 20dB step attenuator feature can be utilized by
switching the second stage Power up/down control. This prod-
uct features a RoHS compliant and Green package with matte
tin finish, designated by the ‘Z’ suffix.
Functional Block Diagram
Vcc = 5V
RFIN
RFOUT
SZM-2166Z
2.3-2.7GHz 2W Power Amplifier
Pb RoHS Compliant
& Green Package
6mm x 6mm QFN Package
Product Features
• P1dB = 35dBm @ 6V
• Three Stages of Gain: 37dB
• 802.11g 54Mb/s Class AB Performance
• Pout = 27dBm @ 2.5% EVM, Vcc 6V, 878mA
• Active Bias with Adjustable Current
• On-chip Output Power Detector
• Low Thermal Resistance
• Power up/down control < 1μs
• Attenuator step 20dB @ Vpc2 = 0V
Vbias = 5V
Stage 1
Bias
Stage 2
Bias
Stage 3
Bias
Applications
• 802.16 WiMAX Driver or Output Stage
Pow er
Up/Dow n
Control
Key Specifications
Pow er
Detector
• 802.11b/g WLAN, WiFi
• CPE Terminal Applications
Symbol
Parameters: Test Conditions, 2.5-2.7GHz App circuit,
Z0 = 50Ω, VCC = 6.0V, Iq = 724mA, TBP = 30ºC
Unit
Min.
Typ.
fO Frequency of Operation
MHz
2300
P1dB
Output Power at 1dB Compression – 2.7GHz
dBm
35
S21 Small Signal Gain – 2.7GHz
dB 34.5 36
EVM%
EVM at 27dBmOutput power EVM 802.11g 54Mb/s - 2.7GHz
%
2.5
Max.
2700
IM3
Third Order Suppression (Pout=23dBm per tone) - 2.7GHz
dBc
-40 -35
NF Noise Figure at 2.7 GHz
dB 8.3
IRL
ORL
Worst Case Input Return Loss 2.5-2.7GHz
Worst Case Output Return Loss 2.5-2.7GHz
10 14
dB
13 17
Vdet Range Output Voltage Range for Pout=10dBm to 33dBm
V
0.9 to 1.8
Icq Quiescent Current (Vcc = 6V)
mA 615 724 832
IVPC
Power Up Control Current (Vpc=6V, ( IVPC1 +IVPC2+ IVPC3 )
mA
4
Ileak Vcc Leakage Current (Vcc = 6V, Vpc = 0V)
µA
100
Rth, j-l
Thermal Resistance (junction - lead)
ºC/W
12
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product
for use in life-support devices and/or systems.
Copyright 2007 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-105683 Rev B
Free Datasheet http://www.datasheet4u.com/
Preliminary
SZM-2166Z 2.3-2.7GHz 2W Power Amp
Typical Performance with appropriate app circuit(Vcc=6V, ***Icq=655mA, * 802.11g 54Mb/s 64QAM)
Parameter
Units
**2.3GHz **2.4GHz ***2.5GHz ***2.6GHz ***2.7GHz
Gain @ Pout=26dBm
dB
37.5
37.5
37.5
37
35
P1dB
dBm 34 34 35 35 35
EVM% at 27dBm Output Power*
%
2.3 2.9 1.7 1.7 2.5
Current @ Pout 2.5% EVM*
mA
768 779 900 889 878
Input Return Loss
dB 23 21 14 14 14
Output Return Loss
dB 14 11 20 25 18
**Measured with 2.3-2.4GHz Application circuit. See page 11 for details.
***Measured with 2.5-2.7GHz Application circuit. See page 13 for details
Absolute Maximum Ratings
Parameters
Value
Unit
VC3 Collector Bias Current (IVC3)
VC2 Collector Bias Current (IVC2)
VC1 Collector Bias Current (IVC1)
*****Device Voltage (VD)
Power Dissipation
1500
500
150
9.0
6
mA
mA
mA
V
W
Operating Lead Temperature (TL)
****Max CW RF output Power for 50 ohm
continuous long term operation
-40 to +85
30
ºC
dBm
Max CW RF Input Power for 50 ohm out-
put load
26
dBm
Max CW RF Input Power for 10:1 VSWR
RF out load
5
dBm
Max Storage Temperature
+150
ºC
Operating Junction Temperature (TJ)
ESD Human Body Model
+150
Class 1B
ºC
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continuous operation
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias conditions should also satisfy the following expression:
IcqVcc < (TJ - TL) / RTH’ j-l
Note: Icq in this equation is for the stage with the highest current
**** With specified application circuit.
*****No RF Drive
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-105683 Rev B
Free Datasheet http://www.datasheet4u.com/
|
PDF 파일 내의 페이지 : 총 16 페이지
제조업체: Sirenza Microdevices
( sirenza )
SZM-2166Z amplifier
데이터시트 다운로드 :
[ SZM-2166Z.PDF ]
[ SZM-2166Z 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
SZM-2166Z
2.3-2.7GHz 2W Power Amplifier - Sirenza Microdevices
SZM-2166Z
2W POWER AMPLIFIER - RF Micro Devices