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AVAGO |
ALM-11036
776 MHz – 870 MHz
Low Noise, High Linearity Amplifier Module
with Fail-Safe Bypass Feature
Data Sheet
Description
Avago Technologies’ ALM-11036 is an easy-to-use GaAs
MMIC Tower Mount Amplifier (TMA) LNA Module with low
IL bypass path.The module has low noise and high linearity
achieved through the use of Avago Technologies’ propri-
etary 0.25 mm GaAs Enhancement-mode pHEMT process.
All matching components are fully integrated within the
module and the 50 ohm RF input and output pins are
already internally AC-coupled. This makes the ALM-11036
extremely easy to use as the only external parts are DC
supply bypass capacitors. For optimum performance
at other bands, ALM-11136 (870-915 MHz), ALM-11236
(1710-1850 MHz) and ALM-11336 (1850-1980) are recom-
mended. All ALM-11x36 share the same package and pin
out configuration.
Pin Configuration and Package Marking
7.0 x 10.0 x 1.5 mm3 36-lead MCOB
Pin Connection
4 RF_IN
26
25
1
2
23
RF_OUT
24
3 28
EXT_P2
23
22
4
5
30
EXT_P1
21
6 33
Vdd
20
19
7
8
Others GND
Note:
Package marking provides orientation and identification
“11036” = Device Part Number
“WWYY” = Work week and Year of manufacture
“XXXX” = Last 4 digit of Lot number
Features
• Very Low Noise Figure
• Good Return Loss
• Low Bypass IL
• Fail-safe Bypass mode
• High linearity performance
• High isolation @LNA mode
• Flat gain
• GaAs E-pHEMT Technology
• Single 5 V power supply
• Compact MCOB package 7.0 x 10.0 x 1.5 mm3
• MSL2a
Specifications
849 MHz; 5 V, 92 mA (typical)
• 15.6 dB Gain
• ≥ 18 dB RL
• 0.78 dB Noise Figure
• 21.3 dBm IIP3
• 4 dBm Input Power at 1 dB gain compression
• 0.82 dB Bypass IL
• ≥ 18 dB Bypass RL
• ≥ 50 dB isolation @LNA mode
Applications
• Tower Mount Amplifier (TMA)
• Cellular Infrastructure
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 350 V
ESD Human Body Model = 1500 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Free Datasheet http://www.datasheet4u.com/
Absolute Maximum Rating [1] TA = 25° C
Symbol
Parameter
Vdd Device Voltage,
RF output to ground
Pin,max
Pdiss
Tj
TSTG
CW RF Input Power
(Vdd = 5.0 V, Idd = 100 mA)
Total Power Dissipation [3]
Junction Temperature
Storage Temperature
Units Absolute Max.
V 5.5
dBm +15
W 0.715
°C 150
°C -65 to 150
Thermal Resistance [2]
(Vdd = 5.0 V, Idd = 100 mA) θjc = 83.1 °C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using Infra-Red
measurement technique.
3. Power dissipation with unit turned on. Board
temperature Tc is 25° C. Derate at 12.3 mW/°C
for TC > 92° C.
Electrical Specifications [1, 4]
RF performance at TA = 25° C, Vdd = 5 V, 849 MHz, measured on demo board in Figure 1 with component listed in Table 1
for DC bypass.
Symbol
Parameter and Test Condition
Frequency (MHz) Units Min. Typ. Max.
Idd Drain Current
Gain Gain
mA 75 92 107
776
dB –
15.4 –
849 14.2 15.6 17.2
IRL Input Return Loss, 50 Ω source
dB –
30 –
ORL Output Return Loss, 50 Ω load
dB –
26 –
NF [2]
Noise Figure
776
dB –
0.84 –
849 – 0.78 0.95
IIP3 [3]
Input Third Order Intercept Point
dBm 18.7 21.3 –
IP1dB
Input Power at 1 dB Gain Compression
dBm 2.85 4
–
Bypass IL
Bypass Insertion Loss, 50 Ω load Vdd = 0 V
776
849
dB –
–
0.7 –
0.82 1.1
Bypass IRL
Input Return Loss, 50 Ω source Vdd = 0 V
dB –
35 –
Bypass ORL
Output Return Loss, 50 Ω load Vdd = 0 V
dB –
35 –
ISOL Bypass Isolation @LNA ON Vdd = 5 V
dB –
54 –
Notes:
1. Measurements at 849 MHz obtained using demo board described in Figure 1.
2. For NF data, board losses of the input have not been de-embedded.
3. IIP3 test condition: FRF1 = 849 MHz, FRF2 = 850 MHz with input power of -15 dBm per tone.
4. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application
note for more details.
2
Free Datasheet http://www.datasheet4u.com/
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