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AWT6307R 반도체 회로 부품 판매점

LINEAR POWER AMPLIFIER MODULE



ANADIGICS 로고
ANADIGICS
AWT6307R 데이터시트, 핀배열, 회로
FEATURES
• InGaP HBT Technology
• High Efficiency:
21 % @ +16 dBm output
40 % @ +28 dBm output
• Low Quiescent Current: 16 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• Internal Voltage Regulation
• Optimized for a 50 System
• Low Profile Surface Mount Package: 1 mm
• CDMA 1XRTT, 1xEV-DO Compliant
• Pinout Enables Easy Phone Board Migration
From 4 mm x 4 mm Package
• RoHS Compliant Package, 250 oC MSL-3
APPLICATIONS
• CDMA Wireless Handsets and Data Devices
PRODUCT DESCRIPTION
The AWT6307R meets the increasing demands for
higher efficiency and smaller footprint in CDMA 1X
handsets. The package pinout was chosen to
enable handset manufacturers to switch from a
4 mm x 4 mm PA module with few layout changes
while reducing board area requirements by 44 %.
The AWT6307R uses ANADIGICS’ exclusive InGaP-
Plus™ technology, which combines HBT and
pHEMT devices on the same die, to enable state-
of-the-art reliability, temperature stability, and
ruggedness. The AWT6307R is part of ANADIGICS’
High-Efficiency-at-Low-Power (HELP™) family of
CDMA power amplifiers, which deliver low quiescent
currents and significantly greater efficiency without
a costly external DAC or DC-DC converter. Through
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levels, specifically at low- and mid-range power
levels where the PA typically operates, thereby
dramatically increasing handset talk-time and
standby-time. Its built-in voltage regulator eliminates
the need for external voltage regulation
components. The 3 mm x 3 mm x 1 mm surface
mount package incorporates matching networks
optimized for output power, efficiency and linearity
in a 50 system.
AWT6307R
HELPTM Cellular CDMA 3.4 V/28 dBm
Linear PowerAmplifier Module
PRELIMINARY DATA SHEET - Rev 1.0
AWT6307R
M9 Package
8 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
VEN 1
VMODE 2
GND at slug (pad)
8 GND
Bias Control
7 RFOUT
RFIN 3
6 GND
VBATT 4
5 VCC
Figure 1: Block Diagram
03/2006


AWT6307R 데이터시트, 핀배열, 회로
AWT6307R
VEN 1
GND
8 GND
VMODE 2
7 RFOUT
RFIN 3
6 GND
VBATT
45
GND
Figure 2: Pinout (X-ray Top View)
VCC
Table 1: Pin Description
PIN NAME DESCRIPTION
1 VEN PA Enable Voltage
2 VMODE Mode Control
3
RFIN
RF Input
4
VBATT
Battery Voltage
5 VCC Supply Voltage
6 GND Ground
7 RFOUT RF Output
8 GND Ground
www.DataSheet4U.com
2 PRELIMINARY DATA SHEET - Rev 1.0
03/2006




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AWT6307R amplifier

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AWT6307R

LINEAR POWER AMPLIFIER MODULE - ANADIGICS