LX5512E 반도체 회로 부품 판매점
Power Amplifier
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 Microsemi Corporation |
www.DataSheet4U.com
LX5512E
TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
The LX5512E is a power amplifier For 19dBm OFDM output power
optimized for WLAN applications in (64QAM, 54Mbps), the PA provides a
the 2.4-2.5 GHz frequency range. The low EVM (Error-Vector Magnitude) of
PA is implemented as a three-stage 3 %, and consumes 130 mA total DC
monolithic microwave integrated current.
circuit (MMIC) with active bias and The LX5512E is available in a 16-pin
input/output pre-matching. The device 3mmx3mm micro-lead package (MLP).
is manufactured with an InGaP/GaAs The compact footprint, low profile, and
Heterojunction Bipolar Transistor excellent thermal capability of the MLP
(HBT) IC process (MOCVD). It package makes the LX5512E an ideal
operates at a single low voltage supply solution for high-gain power amplifier
of 3.3V with 34 dB power gain requirements for IEEE 802.11b/g
between 2.4-2.5GHz, at a low applications.
quiescent current of 50 mA.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
Advanced InGaP HBT
2.4 – 2.5GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current Icq
~50mA
Power Gain ~34dB @ 2.45GHz
and Pout = 19dBm
Total Current 130mA for Pout =
19dBm @ 2.45GHz OFDM
EVM ~ 3.0% for 64QAM /
54Mbps and Pout = 19dBm
Small Footprint (3 x 3 mm2)
Low Profile (0.9mm)
APPLICATIONS
IEEE 802.11b/g
PRODUCT HIGHLIGHT
Copyright 2000
Rev. 1.2, 2004-01-16
PACKAGE ORDER INFO
Plastic MLPQ
LQ 16 pin
LX5512E-LQ
Note: Available in Tape & Reel.
Append the letter “T” to the part number.
(i.e. LX5512E-LQT)
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
LX5512E
TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
ABSOLUTE MAXIMUM RATINGS
DC Supply Voltage, RF off ...............................................................................6V
Collector Current ........................................................................................400mA
Total Power Dissipation....................................................................................2W
RF Input Power............................................................................................. 5dBm
Operation Ambient Temperature ...................................................-40°C to +85°C
Storage Temperature....................................................................-60°C to +150°C
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal.
PACKAGE PIN OUT
VC3
RF OUT
RF OUT
DET PWR
1
3
12
11
1
0
9
8
14 15 16
*1
2
3
4
7 65
GND
RF IN
RF IN
VB1
THERMAL DATA
LQ Plastic MLPQ 16-Pin
THERMAL RESISTANCE-JUNCTION TO CASE, θJC
THERMAL RESISTANCE-JUNCTION TO AMBIENT, θJA
10°C/W
50°C/W
* Pad is Ground
LQ PACKAGE
(Bottom View)
Name
RF IN
VB1
VB2
VB3
VCC
RF OUT
VC1
VC2
VC3
DET_REF
DET_PWR
GND
FUNCTIONAL PIN DESCRIPTION
Description
RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the
first stage.
Bias current control voltage for the first stage.
Bias current control voltage for the second stage
Bias current control voltage for the third stage. The VB3 pin can be connected with the first and second stage
control voltage (VB1,VB2) into a single reference voltage (referred to as Vref) through an external resistor
bridge.
Supply voltage for the bias reference and control circuits. The VCC feed line should be terminated with a 10
nF bypass capacitor close to connector pin. This pin can be combined with VC1, VC2 and VC3 pins, resulting
in a single supply voltage (referred to as Vc).
RF output for the power amplifier. This pin is DC-decoupled from the transistor collector of the third stage..
Power supply for first stage amplifier. The VC1 feedline should be terminated with a 120pF bypass capacitor,
followed by a 10 Ohm resistor
Power supply for second stage amplifier. The VC2 feedline should be terminated with a 47 pF bypass
capacitor, followed by a 5 Ohm resistor
Power supply for the third stage amplifier. The VC3 feedline should be terminated with a 120 pF bypass
capacitor. This pin can be combined with VC1,VC2 and VCC pins, resulting in a single supply voltage (referred
to as Vc
Power detector reference output pin should be terminated with a 100 kOhm loading resistor
Power detector output-coupled pin should be terminated with a 100 kOhm loading resistor
The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the
power amplifier..
Copyright 2000
Rev. 1.2, 2004-01-16
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
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LX5512E amplifier
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국내 전력반도체 판매점
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