NE27200 반도체 회로 부품 판매점
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
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 NEC |
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE32500, NE27200
C to Ka BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET CHIP
DESCRIPTION
NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs
and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable
for commercial systems, industrial and space applications.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz
• Gate Length : Lg = 0.2 µm
• Gate Width : Wg = 200 µm
ORDERING INFORMATION
PART NUMBER
NE32500
NE27200
QUALITY GRADE
Standard (Grade D)
Special, specific (Grade C and B)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDS 4.0
Gate to Source Voltage
VGS –3.0
Drain Current
ID IDSS
Total Power Dissipation
Ptot*
200
Channel Temperature
Tch 175
Storage Temperature
Tstg –65 to +175
* Chip mounted on a Alumina heatsink (size: 3 × 3 × 0.6t)
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
SYMBOL
Gate to Source Leak Current
IGSO
Saturated Drain Current
IDSS
Gate to Source Cutoff Voltage VGS(off)
Transconductance
gm
Thermal Resistance
Rth*
Noise Figure
NF
Associated Gain
Ga
MIN.
–
20
–0.2
45
–
–
11.0
TYP.
0.5
60
–0.7
60
–
0.45
12.5
MAX.
10
90
–2.0
–
260
0.55
–
UNIT
µA
mA
V
mS
˚C/W
dB
dB
TEST CONDITIONS
VGS = –3 V
VDS = 2 V, VGS = 0 V
VDS = 2 V, ID = 100 µA
VDS = 2 V, ID = 10 mA
channel to case
VDS = 2 V, ID = 10 mA, f = 12 GHz
RF performance is determined by packaging and testing 10 chips per wafer.
Wafer rejection criteria for standard devices is 2 rejects per 10 samples.
Document No. P11512EJ2V0DS00 (2nd edition)
Date Published January 1997 N
Printed in Japan
©
1996
CHIP DIMENSIONS (Unit: µm)
NE32500, NE27200
5.5 13
58 36.5 66
25
Drain
Source
Source
Gate
25 66
13
49.5 43
350
Thickness = 140 µm
: BONDING AREA
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
100
200 80
150 60
100 40
50 20
0 50 100 150 200 250 0
TA – Ambient Temperature – ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 0 V
–0.2 V
–0.4 V
1.5
VDS – Drain to Source Voltage – V
–0.6 V
–0.8 V
3.0
2
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( nec )
NE27200 amplifier
데이터시트 다운로드 :
[ NE27200.PDF ]
[ NE27200 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
