M68757L 반도체 회로 부품 판매점
SILICON MOS FET POWER AMPLIFIER / 806-870MHz / 3W / FM PORTABLE RADIO
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 Mitsubishi |
MITSUBISHI RF POWER MODULE
M68757L
SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO
OUTLINE DRAWING
30±0.2
26.6±0.2
21.2±0.2
12
0.45
6±1
13.7±1
18.8±1
23.9±1
3
5
4
Dimensions in mm
BLOCK DIAGRAM
2-R1.5±0.1
23
14
5
PIN:
1 Pin : RF INPUT
2 VGG : GATE BIAS SUPPLY
3 VDD : DRAIN BIAS SUPPLY
4 PO : RF OUTPUT
5 GND: FIN
H46
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol
Parameter
VDD Supply voltage
VGG Gate bias voltage
Pin Input power
PO Output power
TC (OP) Operation case temperature
Tstg Storage temperature
Note. Above parameters are guaranteed independently.
Conditions
VGG≤3.5V, ZG=ZL=50Ω
f=806-870MHz, ZG=ZL=50Ω
f=806-870MHz, ZG=ZL=50Ω
f=806-870MHz, ZG=ZL=50Ω
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted)
Symbol
Parameter
Test conditions
f Frequency range
PO Output power
ηT Total efficiency
2fO 2nd. harmonic
ρin Input VSWR
VDD=7.2V, VGG=3.5V, Pin=50mW
Stability
ZG=ZL=50Ω, VDD=5-9.2V,
Load VSWR <4:1
Load VSWR tolerance
VDD=9V, Pin=50mW,
PO=3W (VGG Adjust), ZL=20:1
Note. Above parameters, ratings, limits and test conditions are subject to change.
Ratings
9.2
4
70
5
-30 to +100
-40 to +100
Unit
V
V
mW
W
°C
°C
Limits
Min Max
806 870
3
30
-28
4
No parasitic oscillation
No degradation or
destroy
Unit
MHz
W
%
dBc
Nov. ´97
MITSUBISHI RF POWER MODULE
M68757L
SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO
TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY VS. FREQUENCY
7 70
6
PO
5
ηT
4
60
50
40
3 30
2
VDD=7.2V
ρin
20
VGG=3.5V
1 Pin=50mW
10
ZG=ZL=50 Ω
00
800 810 820 830 840 850 860 870 880
FREQUENCY f (MHz)
OUTPUT POWER, TOTAL EFFICIENCY
VS. INPUT POWER
100.0
100.0
ηT
10.0
10.0
PO
1.0
0.1
1
1.0
f=806MHz
VDD=7.2V
VGG=3.5V
ZG=ZL=50Ω
0.1
10 100
INPUT POWER Pin (mW)
OUTPUT POWER, TOTAL EFFICIENCY
VS. INPUT POWER
100.0
100.0
ηT
10.0
10.0
PO
1.0
0.1
1
1.0
f=870MHz
VDD=7.2V
VGG=3.5V
ZG=ZL=50Ω
0.1
10 100
INPUT POWER Pin (mW)
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE SUPPLY VOLTAGE
6 50
ηT
5
40
4 30
PO
3 20
2 10
f=806MHz
1 VDD=7.2V 0
Pin=50mW
ZG=ZL=50 Ω
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
GATE SUPPLY VOLTAGE VGG (V)
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE SUPPLY VOLTAGE
6 50
5 ηT
40
4
PO
3
30
20
2 10
f=870MHz
1 VDD=7.2V 0
Pin=50mW
ZG=ZL=50 Ω
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
GATE SUPPLY VOLTAGE VGG (V)
OUTPUT POWER, TOTAL EFFICIENCY
VS. DRAIN SUPPLY VOLTAGE
14 70
12 60
10
ηT
8
50
40
6 30
4
PO
f=806MHz 20
2
VGG=3.5V
Pin=50mW
10
ZG=ZL=50Ω
00
3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5 11.5 12.5
DRAIN SUPPLY VOLTAGE VDD (V)
Nov. ´97
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제조업체: Mitsubishi
( mitsubishi )
M68757L amplifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
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