RF2318PCBA-H 반도체 회로 부품 판매점
LINEAR BROADBAND AMPLIFIER
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 RF Micro Devices |
Preliminary
3
RF2318
LINEAR BROADBAND AMPLIFIER
Typical Applications
• CATV Amplifiers
• Cable Modems
• Broadband Gain Blocks
• Return Channel Amplifier
• Base Stations
Product Description
The RF2318 is a broadband general purpose, low cost
high linearity RF amplifier IC. The device is manufactured
on an advanced Gallium Arsenide Heterojunction Bipolar
Transistor (HBT) process, and has been designed for use
as an easily cascadable 75Ω gain block. The gain flat-
ness of better than 1.0dB from 5MHz to 1000MHz, and
the high linearity, make this part ideal for cable TV appli-
cations. Other applications include IF and RF amplifica-
tion in wireless voice and data communication products
operating in frequency bands up to 5000MHz. The device
is self-contained with 75Ω input and output impedances,
and requires only two external DC biasing elements to
operate as specified.
.156
.152
1
.004
MIN
.017
.195
.191
.050
.240 .056
.232 .052
5°
.022
.018
.008
3
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
RF IN 1
GND 2
GND 3
GND 4
8 RF OUT
7 GND
6 GND
5 GND
Functional Block Diagram
Package Style: SOP-8
Features
• DC to over 5000MHz Operation
• Internally Matched Input and Output
• 8dB Small Signal Gain
• 6dB Noise Figure
• +18dBm Output Power
• Single 9V to 12V Positive Power Supply
Ordering Information
RF2318
Linear Broadband Amplifier
RF2318 PCBA-L Fully Assembled Evaluation Board (DC to 3GHz)
RF2318 PCBA-H Fully Assembled Evaluation Board (3GHz to 6GHz)
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A2 010228
3-21
RF2318
Preliminary
Absolute Maximum Ratings
Parameter
Device Current
Input RF Power
Output Load VSWR
Ambient Operating Temperature
Storage Temperature
Rating
70
+13
20:1
-40 to +85
-40 to +150
Unit
mA
dBm
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
3 Parameter
Overall (50Ω)
Frequency Range
Gain
Noise Figure
Input VSWR
Output VSWR
Output IP2
Output IP3
Output P1dB
Saturated Output Power
Saturated Output Power
Saturated Output Power
Reverse Isolation
Power Supply
Device Voltage (VD)
Operating Current Range
Specification
Min.
Typ.
Max.
DC to 5000
889
8 9 10
10 11 12
6
6
1.6:1
1.9:1
1.4:1
2.0:1
3.0:1
1.9:1
3.0:1
+50
+30
+33 +35
+30 +33
TBD
TBD
TBD
TBD
18
TBD
15
7.0
6.5
63
20
65
Unit
MHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
V
V
mA
Condition
T=27°C, VCC=9V, Icc=60mA, RC=30Ω
1dB Bandwidth
From 10MHz to 1000MHz
From 1000MHz to 2000MHz
From 2000MHz to 5000MHz
From 50MHz to 300MHz, -30°C to +70°C
From 300MHz to 1000MHz, -30°C to +70°C
From 10MHz to 1800MHz
From 1800MHz to 5000MHz
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain these VSWRs at the intended oper-
ating frequency range.
From 10MHz to 1800MHz
From 1800MHz to 4000MHz
From 4000MHz to 5000MHz
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain these VSWRs at the intended oper-
ating frequency range.
Tones at 500MHz and 900MHz
At 100MHz
At 500MHz
At 900MHz
At 100MHz
At 500MHz
At 900MHz
At 100MHz
At 500MHz
At 900MHz
From 30MHz to 4000MHz
From 4000MHz to 5000MHz
On pin 8, ICC=63mA
On pin 8, ICC=49mA
VD = 7.0 V
3-22
Rev A2 010228
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전화번호 : 051-319-2877
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관련 데이터시트
RF2318PCBA-H
LINEAR BROADBAND AMPLIFIER - RF Micro Devices
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LINEAR BROADBAND AMPLIFIER - RF Micro Devices