AM55-0004SMB 반도체 회로 부품 판매점
250 mW Linear Power Amplifier and T/R Switch 1.8 - 2.0 GHz
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 Tyco Electronics |
Preliminary Specifications
250 mW Linear Power Amplifier and T/R Switch
1.8 - 2.0 GHz
AM55-0004
Features
q Operates Over Full PCN/PCS/PHS Bands
q Operates Over +3 V to +5 V Supply Voltage
q +24 dBm P1dB Typical at PA Out
q 35% PAE @ P1dB for Linear Operation
q On-Chip T/R Switch, Linear Operation to +30 dBm
q Low Cost SSOP-28 Plastic Package
Description
M/A-COM’s AM55-0004 power amplifier/switch integrates a
power amplifier and transmit/receive switch in a low cost
SSOP package. The power amplifier delivers +24 dBm of
linear power with high efficiency and can be operated at
supply voltages as low as 2.7 V. It is ideally suited for
QPSK or other linearly modulated systems in the 1.8 to 2.0
GHz frequency band.
The power amplifier/switch is fully monolithic and requires
only one output capacitor for power match. The T/R switch
achieves good insertion loss and isolation without degrading
the overall linearity.
The AM55-0004 is ideally suited for final stage power
amplification in linear TDD systems. The integrated switch is
convenient for duplexing. The AM55-0004 can also be used
as a driver stage for high power systems. Typical applications
include Japanese PHS systems or PCN/PCS transmit chains.
M/A-COM’s AM55-0004 is fabricated using a mature
0.5-micron gate length GaAs process. The process features
full passivation for increased performance and reliability.
SSOP-28
+.0025
.0275 -.0025
0,7
+0,06
-0,06
+.0037
.3900 -.0041
9,91
+0,09
-0,1
PIN 1
.1540
+.0034
-.0043
.236 ±.008
3,91
+0,09
-0,11
5,99 ±0,2
.057 ±.003
1,45 ±0,08
.015 (0,38) X 45°
+.0018
.0080 -.0005
0,2
+0,05
-0,01
.007 ±.003
0,18 ±0,08
.025
0,64
.010
+.004
-.001
0,25
+0,1
-0,03
.004 (0,10)
Dimensions are inches over millimeters.
0-8°
.028
+.022
-.013
0,71
+0,56
-0,33
Ordering Information
Part Number
AM55-0004
AM55-0004TR
AM55-0004RTR
AM55-0004SMB
Description
SSOP 28-Lead Plastic Package
Forward Tape & Reel*
Reverse Tape & Reel*
Designer’s Kit
* If specific reel size is required, consult factory for part
number assignment.
Typical Electrical Specifications
Test conditions: Frequency: 1.9 GHz, VDD1 = VDD2 = 4.8 V ±10%, VG1 adjusted for 30 mA quiescent bias on VDD1,
VG2 adjusted for 65 mA quiescent bias on VDD2, TA= +25°C
Parameter
Units
Min.
Typ.
Max.
Power Amplifier
Linear Gain
Power Output @ P1dB at PA OUT port
Current From Positive Supply @ P1dB
Input VSWR
T/R Switch
Insertion Loss
Input Match
Isolation
dB 22
24
dBm
22.5
24
mA 75 175 275
2.0:1
dB 0.6 1.0
1.5:1
dB 15
20
Specifications Subject to Change Without Notice
M/A-COM Inc. s
1011 Pawtucket Boulevard, Lowell, MA 01853 USA
1
s
V2.00
Telephone: 800-366-2266
250 mW Linear Power Amplifier and T/R Switch
AM55-0004
Absolute Maximum Ratings1
Parameter
Max. Input Power2
Operating Voltages2
Operating Temperature
Storage Temperature
Absolute Maximum
+23 dBm
VDD = 7 V
VGG = -5 V
VDD - VGG = 8 V
-40°C to +85°C
-65°C to +150°C
1. Exceeding these limits may cause permanent damage.
2. Ambient temperature (TA) = +25°C
Pin Configuration
Pin No. Pin Name
1 GND
Description
DC and RF Ground
2 VSW Complimentary T/R Switch Control,
-4 V Tx mode/0 V Rx mode
3
GND
DC and RF Ground
4
Tx IN
Transmit side of T/R switch
5
GND
DC and RF Ground
6
GND
DC and RF Ground
7 ANT IN/OUT Common port of T/R switch which
is connected to the antenna
8
GND
DC and RF Ground
9
Rx OUT
Receive side of T/R switch
10 GND DC and RF Ground
11 GND DC and RF Ground
12 VDD1 Positive bias for the first stage of
PA, +2.7 to +6.0 volts
13 SAVE Tx Sleep mode control of first stage of
PA ONLY
0 V — first PA stage on
-4 V — first PA stage off
14 GND DC and RF Ground
15 GND DC and RF Ground
16 PA IN RF input of the Power Amplifier
17 GND DC and RF Ground
18 VG1 Negative bias control for the first PA
stage, voltage divider is on the MMIC,
adjusted to set VDD1 quiescent bias
current, which is typically 30 mA.
Input impedance: 10 k Ω
19 GND DC and RF Ground
20 VG2 Negative bias control for the second
PA stage, adjusted to set VDD2
quiescent bias current, which is
typically 65 mA.
Input impedance: > 1MΩ
21 GND Second Stage DC and RF Ground
22 GND Second Stage DC and RF Ground
23 GND Second Stage DC and RF Ground
24 GND Second Stage DC and RF Ground
25 PA OUT RF output of the Power Amplifier
26 VDD2 Positive bias for the second stage of
the PA, +2.7 to +6.0 volts
27 VSW T/R Switch Control, 0 V Tx mode/-4 V
Rx mode
28 GND DC and RF Ground
Truth Table
Operating Mode
PA Tx
PA Sleep
T/R Switch Tx
T/R Switch Rx
X - Don’t Care
VSW
VSW SAVE Tx
X X 0V
X X -4.0 Volts
0 Volts -4.0 Volts X
-4.0 Volts 0 Volts
X
Functional Diagram and Pin Configuration
1
GND
VSW
GND
Tx IN
GND
GND
ANT IN/OUT
GND
Rx OUT
GND
GND
VDD1
SAVE Tx
GND
14
28
GND
VSW
VDD12
PA OUT
GND
GND
GND
GND
VGG12
GND
VGG12
GND
PA IN
GND
15
Specifications Subject to Change Without Notice
V 2.00
M/A-COM Inc. s 1011 Pawtucket Boulevard, Lowell, MA 01853 USA s Telephone: 800-366-2266
2
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AM55-0004SMB amplifier
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전화번호 : 051-319-2877
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