AM52-0001TR 반도체 회로 부품 판매점
1.2 W High Efficiency Power Amplifier 800 - 960 MHz
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 Tyco Electronics |
Preliminary Release
1.2 W High Efficiency Power Amplifier
800 - 960 MHz
AM52-0001
Features
SOIC-8P
V1.00
• SOIC-8 Thermally Efficient Plastic Package
• +30.8 dBm Typical Power Out
• Greater than 50% Typical Power Added Efficiency
• 21 dB typical Power Gain
• Flexible External Output Matching
.2 2 8 4 /.2 4 4 0
(5 .8 0 /6 .2 0 )
.010(.25)M B M
.1 4 9 7 /.1 5 7 4
(3 .8 0 /4 .0 0 )
-B -
Description
M/A-COM’s AM52-0001 is a GaAs power amplifier in a thermally
efficient low cost SOIC-8 plastic package. The AM52-0001 is
designed for high efficiency 1.2 W output power and 21 dB of
associated gain in the 800-960 MHz frequency band.
The
AM52-0001 is unconditionally stable in both small and large signal
operation. It features flexible biasing for improved dynamic range
and off-chip matching for improved efficiency and flexibility.
The AM52-0001 is specifically designed for high efficiency final
output power amplification in FM, GFSK and FSK type systems,
such as AMPS, ETACS, NTACS, CT1, CDPD and ISM.
M/A-COM's AM52-0001 is fabricated using a mature 0.5 micron
gate length GaAs MESFET power process. The process features
full passivation for increased performance and reliability. The
AM52-0001 can be used with standard automated SMT assembly
equipment (See M/A-COM application note M558).
.0 5 3 2 /.0 6 8 8
(1 .3 5 /1 .7 5 )
.004 (.10)
.050 (1.27)
.1 8 9 0 /.1 9 6 8
(4 .8 0 /5 .0 0 )
-A-
CHAMFER
-C-
.013/.020 (8 PL)
(.3 3 /.5 1 )
.010 (.25) M C A M B S
Ordering Information
Part Number
Package
AM52-0001
SOIC-8 Lead Plastic
AM52-0001TR
Forward Tape and Reel *
AM52-0001SMB
Designer’s Kit
* If specific reel size is required, consult factory for part number
assignment.
Electrical Specifications: VD1 = VD2 = 4.8V ± 5%, TA = +25°C, Freq. = 824-849 MHz, VGG = VG2 = VG1 adjusted for 150 mA quiescent
drain Current.
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Linear Gain
Pin ≤ -20 dBm
dB 29
Output Power
Pin = 10 dBm
dBm
30.8
Power Gain
dB 21
Power Added Efficiency
% 55
Second Harmonic
dBc -30
Third Harmonic
Noise Power1
Stability2
Load Mismatch3
dBc
dBm
VSWR
VSWR
-50
-92
10:1
10:1
Gate Current
mA 5
Adjustable Power Control (APC) VD1 = 0 → 4.8V VD2 = 4.8 V
dB
27
1. Noise power (30 KHz RBW), 45 MHz above TX Freq range, measured under rated output power conditions.
2. Parasitic Oscillation defined as any spurious output less than 60 dBc with respect to desired signal level. Measured with nominal Pin and an output
VSWR of 10:1 any phase, VDD = 4.8 V.
3. No permanent degradation with nominal Pin and an output VSWR of 10:1 at any phase (360° rotation in 10 sec.) with VDD up to 6V. .
Specifications Subject to Change Without Notice.
M/A-COM Inc.
North America: Tel. (800) 366-2266 ♦ Asia/Pacific: Tel. +81 3 3226-8761 ♦ Europe:
Fax (800) 618-8883
Fax +81 3 3226-8769
1
Tel. +44 (1344) 869-595
Fax +44 (1344) 300 020
1.2 W High Efficiency Power Amplifier
Absolute Maximum Ratings 1
Parameter
Absolute Maximum
Input Power 2
Operating Voltage 2
+23 dBm
VDD = + 10 Volts
Junction Temperature 3
VGG = - 6 Volts
+150 °C
Storage Temperature
-65 °C to +150 °C
Operating Temperature -40 °C to +85 °C
1. Exceeding any one or combination of these limits may cause
permanent damage.
2. Ambient Temperature (TA) = + 25°C
3. See temperature derating curve.
Functional Block Diagram
(AMPS 824-849 MHz)
AM52-0001
V1.00
VG1
C7
R F IN
C10
C3
1
2
3
VD1
4
C6 C1
9
C2
8 T1
7 T2
C11
VD2
C9
6 RF OUT
C8
5
VG2
C4 C5
Pin Configuration
Pin No.
1
2
3
4
5
6
7
8
9
Pin Name
VG1
RF IN
GND
VD1
VG2
GND
RF OUT
VD2
Puck
Description
Negative supply voltage, First stage
RF Input of the amplifier
DC and RF Ground
Positive supply voltage, First stage
Negative supply voltage, First stage
DC and RF Ground
RF Output of the amplifier
Positive supply voltage, Second stage
DC and RF Ground
Recommended PCB Configuration
Layout View (AMPS 824-849 MHz)
External Circuitry Parts List
(AMPS 824-849 MHz)
Part Value
Purpose
C1 - C3
220 pF
By-Pass
C4 - C7
0.1 uF
By-Pass
C8 8 pF
Power Tuning
C9, C10
56 pF
DC Block
C11 1.0 uF
By-Pass
T1
0.470”
Matching Transmission
T2 0.250”
Lines (50 Ω)
1.) The recommended layout is specifically for the AMPS application. It
shows EIA code size 0603 standard SMT capacitors with the exception of
C11 which is a EIA code size 3528
2.) The location of C9, C10 and C11 is not critical to the performance of
the amplifier.
Cross Section View
C11
C7
C2
C3 0.47" (T1)
C10
C6
C1 C4
C5
0.25" (T2)
C8
C9
RF Traces + Components
RF Ground
DC Routing
Customer Defined
The PCB dielectric between RF traces and RF ground layers should
be chosen to reduce RF discontinuities between 50 Ω lines and
package pins. M/A-COM recommends an FR-4 dielectric thickness
of 0.008”(0.2 mm) yielding a 50 Ω line width of 0.015”(0.38 mm).
The recommended metalization thickness is 1 oz. copper and ground
metalization thickness is 2 oz.. Shaded traces are vias to DC
Routing layer and traces on DC Routing layer.
Biasing Procedure
The AM52-0001 requires that VGG bias be applied prior to ANY
VDD bias. Permanent damage will occur if this procedure is not
followed. All FETs in the PA will draw IDSS and damage internal
circuitry. Resistance added in seiries with Vg1 and Vg2 may degrade
performance.
Specifications Subject to Change Without Notice.
2
North America: Tel. (800) 366-2266 ♦ Asia/Pacific: Tel. +81 3 3226-8761 ♦ Europe:
Fax (800) 618-8883
Fax +81 3 3226-8769
M/A-COM Inc.
Tel. +44 (1344) 869-595
Fax +44 (1344) 300 020
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AM52-0001TR amplifier
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국내 전력반도체 판매점
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전화번호 : 051-319-2877
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